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TH58NVG1S3AFT 데이터시트(PDF) 5 Page - Toshiba Semiconductor |
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5 / 32 page 2003-05-19A 5/32 TH58NVG1S3AFT05 AC TEST CONDITIONS PARAMETER CONDITION Input level 2.4 V, 0.4 V Input pulse rise and fall time 3ns Input comparison level 1.5 V, 1.5 V Output data comparison level 1.5 V, 1.5 V Output load CL (100 pF) 1 TTL PROGRAMMING AND ERASING CHARACTERISTICS (Ta 0 to 70 ℃, VCC 2.7V ~ 3.6V) SYMBOL PARAMETER MIN TYP. MAX UNIT NOTES tPROG Average Programming Time 200 700 s N Number of Programming Cycles on Same Page (per 512+16 bytes) 2 (1) tBERASE Block Erasing Time 2 4 ms (1) Refer to Application Note (12) toward the end of this document. |
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