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TH58NVG1S3AFT 데이터시트(PDF) 1 Page - Toshiba Semiconductor |
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TH58NVG1S3AFT 데이터시트(HTML) 1 Page - Toshiba Semiconductor |
1 / 32 page 2003-05-19A 1/32 TH58NVG1S3AFT05 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2GBIT (256M 8BITS) CMOS NAND E 2PROM DESCRIPTION The TH58NVG1S3A is a single 3.3-V 2G-bit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048+64) bytes x 64 pages x 2048 blocks. The device has a 2112-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2112-byte increments. The Erase operation is implemented in a single block unit (128 Kbytes + 4Kbytes: 2112 bytes x 64 pages). The TH58NVG1S3A is a serial-type memory device which utilizes the I/O pins for both address and data input / output as well as for command inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non- volatile memory data storage. FEATURES Organization Memory cell allay 2112 64K 8 2 Register 2112 8 Page size 2112bytes Block size (128K 4K) bytes Modes Read Reset Auto Page Program Auto Block Erase Status Read Mode control Serial input output Command control PIN ASSIGNMENT (TOP VIEW) PIN NAMES I/O1 to I/O8 I/O port CE Chip enable WE Write enable RE Read enable CLE Command latch enable ALE Address latch enable WP Write protect BY / RY Ready / Busy GND Ground Input VCC Power supply VSS Ground Powersupply VCC 2.7 V to 3.6 V Program/Erase Cycles 1E5 Cycles(With ECC) Access time Cell array to register 25 s max Serial Read Cycle 50 ns min Operating current Read (50 ns cycle) 10 mA typ. Program (avg.) 10 mA typ. Erase (avg.) 10 mA typ. Standby 50 A max Package TSOP I 48-P-1220-0.50 (Weight : 0.53 g typ.) TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. 000707EBA1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 NC NC NC NC I/O8 I/O7 I/O6 I/O5 NC NC NC VCC VSS NC NC NC I/O4 I/O3 I/O2 I/O1 NC NC NC NC NC NC NC NC NC GND NC NC VCC VSS NC NC CLE ALE NC NC NC NC NC WE BY / RY 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 WP RE CE |
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