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TEA1620P 데이터시트(PDF) 10 Page - NXP Semiconductors

부품명 TEA1620P
상세설명  STARplug
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제조업체  PHILIPS [NXP Semiconductors]
홈페이지  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

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© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 01 — 17 March 2004
10 of 16
Philips Semiconductors
TEA1620P
STARplugTM
GV(erroramp)
voltage gain of error amplifier
-
20
-
dB
VREG(clamp)
clamping voltage on pin REG
IREG = 6 mA
-
-
7.5
V
Valley switching recognition
dV/dtvalley
valley recognition
−102
-
+102
V/
µs
fvalley
ringing frequency for valley switching
N
× V
o = 100 V
200
550
800
kHz
td(valley-on)
delay from valley recognition to
switch-on
-
150
-
ns
Output stage (FET)
IL(drain)
drain leakage current
VDRAIN = 650 V
-
-
125
µA
VBR(drain)
drain breakdown voltage
Tj >0 °C
650
-
-
V
RDSon
drain-source on-state resistance
ISOURCE = −0.06 A
Tj =25 °C
-
48
55.2
Tj = 100 °C
-
68
78.2
tdrain(f)
drain fall time
VDRAIN(switch_on) = 300 V;
no external capacitor at pin
DRAIN
-75
-
ns
Temperature protection
Tprot(max)
maximum threshold temperature
150
160
170
°C
Tprot(hys)
threshold temperature hysteresis
-
2
-
°C
Overcurrent and short winding protection: pin SOURCE
Vsource(max)
overcurrent protection voltage
dV/dt = 0.1 V/
µs
0.47
0.50
0.53
V
Vswp
short winding protection voltage
dV/dt = 0.5 V/
µs
0.7
0.75
0.8
V
td(propagation)
delay from detecting Vsource(max) to
switch-off
dV/dt = 0.5 V/
µs
-
160
185
ns
tleb
leading edge blanking time
both overcurrent and short
winding protection
250
350
450
ns
Table 6:
Characteristics …continued
Tamb =25 °C; no overtemperature; all voltages are measured with respect to ground; currents are positive when flowing into
the IC; unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit


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