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TEA1620P 데이터시트(PDF) 10 Page - NXP Semiconductors |
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TEA1620P 데이터시트(HTML) 10 Page - NXP Semiconductors |
10 / 16 page 9397 750 12577 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 01 — 17 March 2004 10 of 16 Philips Semiconductors TEA1620P STARplugTM GV(erroramp) voltage gain of error amplifier - 20 - dB VREG(clamp) clamping voltage on pin REG IREG = 6 mA - - 7.5 V Valley switching recognition dV/dtvalley valley recognition −102 - +102 V/ µs fvalley ringing frequency for valley switching N × V o = 100 V 200 550 800 kHz td(valley-on) delay from valley recognition to switch-on - 150 - ns Output stage (FET) IL(drain) drain leakage current VDRAIN = 650 V - - 125 µA VBR(drain) drain breakdown voltage Tj >0 °C 650 - - V RDSon drain-source on-state resistance ISOURCE = −0.06 A Tj =25 °C - 48 55.2 Ω Tj = 100 °C - 68 78.2 Ω tdrain(f) drain fall time VDRAIN(switch_on) = 300 V; no external capacitor at pin DRAIN -75 - ns Temperature protection Tprot(max) maximum threshold temperature 150 160 170 °C Tprot(hys) threshold temperature hysteresis - 2 - °C Overcurrent and short winding protection: pin SOURCE Vsource(max) overcurrent protection voltage dV/dt = 0.1 V/ µs 0.47 0.50 0.53 V Vswp short winding protection voltage dV/dt = 0.5 V/ µs 0.7 0.75 0.8 V td(propagation) delay from detecting Vsource(max) to switch-off dV/dt = 0.5 V/ µs - 160 185 ns tleb leading edge blanking time both overcurrent and short winding protection 250 350 450 ns Table 6: Characteristics …continued Tamb =25 °C; no overtemperature; all voltages are measured with respect to ground; currents are positive when flowing into the IC; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit |
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