FP50R12KT4G_13 datasheet(5/12 Pages) INFINEON

부품명	FP50R12KT4G

상세설명	EconoPIM3 Modul mit schnellem Trench

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5

TechnischeInformation/TechnicalInformation

FP50R12KT4G

IGBT-Module

IGBT-modules

preparedby:CM

approvedby:RS

dateofpublication:2013-11-11

revision:3.0

Diode,Brems-Chopper/Diode,Brake-Chopper

HöchstzulässigeWerte/MaximumRatedValues

PeriodischeSpitzensperrspannung

Repetitivepeakreversevoltage

Tvj = 25°C

VRRM

1200

V

Dauergleichstrom

ContinuousDCforwardcurrent

IF

15

A

PeriodischerSpitzenstrom

Repetitivepeakforwardcurrent

tP = 1 ms

IFRM

30

A

Grenzlastintegral

I²t-value

VR = 0 V, tP = 10 ms, Tvj = 125°C

I²t

48,0

A²s

CharakteristischeWerte/CharacteristicValues

min.

typ.

max.

Durchlassspannung

Forwardvoltage

IF = 15 A, VGE = 0 V

VF

1,75

2,15

V

Tvj = 25°C

Tvj = 125°C

Tvj = 150°C

Rückstromspitze

Peakreverserecoverycurrent

IF = 15 A, - diF/dt = 250 A/µs (Tvj=150°C)

VR = 600 V

IRM

11,0

13,5

14,0

A

Tvj = 25°C

Tvj = 125°C

Tvj = 150°C

Sperrverzögerungsladung

Recoveredcharge

IF = 15 A, - diF/dt = 250 A/µs (Tvj=150°C)

VR = 600 V

Qr

1,20

2,20

2,50

µC

Tvj = 25°C

Tvj = 125°C

Tvj = 150°C

AbschaltenergieproPuls

Reverserecoveryenergy

IF = 15 A, - diF/dt = 250 A/µs (Tvj=150°C)

VR = 600 V

Erec

0,50

0,90

1,00

mJ

Tvj = 25°C

Tvj = 125°C

Tvj = 150°C

Wärmewiderstand,ChipbisGehäuse

Thermalresistance,junctiontocase

proDiode/perdiode

RthJC

1,50

K/W

Wärmewiderstand,GehäusebisKühlkörper

Thermalresistance,casetoheatsink

proDiode/perdiode

λPaste=1W/(m·K)/λgrease=1W/(m·K)

RthCH

0,37

K/W

TemperaturimSchaltbetrieb

Temperatureunderswitchingconditions

Tvj op

-40

150

°C

NTC-Widerstand/NTC-Thermistor

CharakteristischeWerte/CharacteristicValues

min.

typ.

max.

Nennwiderstand

Ratedresistance

TC = 25°C

R25

5,00

k

Ω

AbweichungvonR100

DeviationofR100

TC = 100°C, R100 = 493

Ω

∆R/R

-5

5

%

Verlustleistung

Powerdissipation

TC = 25°C

P25

20,0

mW

B-Wert

B-value

R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))]

B25/50

3375

K

B-Wert

B-value

R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))]

B25/80

3411

K

B-Wert

B-value

R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))]

B25/100

3433

K

AngabengemäßgültigerApplicationNote.

Specificationaccordingtothevalidapplicationnote.

유사한 부품 번호 - FP50R12KT4G_13

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FP50R12KT4G 데이터시트(PDF) 5 Page - Infineon Technologies AG

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유사한 부품 번호 - FP50R12KT4G_13

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