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FP50R12KT4G 데이터시트(PDF) 5 Page - Infineon Technologies AG |
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FP50R12KT4G 데이터시트(HTML) 5 Page - Infineon Technologies AG |
5 / 12 page 5 TechnischeInformation/TechnicalInformation FP50R12KT4G IGBT-Module IGBT-modules preparedby:CM approvedby:RS dateofpublication:2013-11-11 revision:3.0 Diode,Brems-Chopper/Diode,Brake-Chopper HöchstzulässigeWerte/MaximumRatedValues PeriodischeSpitzensperrspannung Repetitivepeakreversevoltage Tvj = 25°C VRRM 1200 V Dauergleichstrom ContinuousDCforwardcurrent IF 15 A PeriodischerSpitzenstrom Repetitivepeakforwardcurrent tP = 1 ms IFRM 30 A Grenzlastintegral I²t-value VR = 0 V, tP = 10 ms, Tvj = 125°C I²t 48,0 A²s CharakteristischeWerte/CharacteristicValues min. typ. max. Durchlassspannung Forwardvoltage IF = 15 A, VGE = 0 V IF = 15 A, VGE = 0 V IF = 15 A, VGE = 0 V VF 1,75 1,75 1,75 2,15 V V V Tvj = 25°C Tvj = 125°C Tvj = 150°C Rückstromspitze Peakreverserecoverycurrent IF = 15 A, - diF/dt = 250 A/µs (Tvj=150°C) VR = 600 V IRM 11,0 13,5 14,0 A A A Tvj = 25°C Tvj = 125°C Tvj = 150°C Sperrverzögerungsladung Recoveredcharge IF = 15 A, - diF/dt = 250 A/µs (Tvj=150°C) VR = 600 V Qr 1,20 2,20 2,50 µC µC µC Tvj = 25°C Tvj = 125°C Tvj = 150°C AbschaltenergieproPuls Reverserecoveryenergy IF = 15 A, - diF/dt = 250 A/µs (Tvj=150°C) VR = 600 V Erec 0,50 0,90 1,00 mJ mJ mJ Tvj = 25°C Tvj = 125°C Tvj = 150°C Wärmewiderstand,ChipbisGehäuse Thermalresistance,junctiontocase proDiode/perdiode RthJC 1,50 K/W Wärmewiderstand,GehäusebisKühlkörper Thermalresistance,casetoheatsink proDiode/perdiode λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 0,37 K/W TemperaturimSchaltbetrieb Temperatureunderswitchingconditions Tvj op -40 150 °C NTC-Widerstand/NTC-Thermistor CharakteristischeWerte/CharacteristicValues min. typ. max. Nennwiderstand Ratedresistance TC = 25°C R25 5,00 k Ω AbweichungvonR100 DeviationofR100 TC = 100°C, R100 = 493 Ω ∆R/R -5 5 % Verlustleistung Powerdissipation TC = 25°C P25 20,0 mW B-Wert B-value R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))] B25/50 3375 K B-Wert B-value R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))] B25/80 3411 K B-Wert B-value R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))] B25/100 3433 K AngabengemäßgültigerApplicationNote. Specificationaccordingtothevalidapplicationnote. |
유사한 부품 번호 - FP50R12KT4G_13 |
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유사한 설명 - FP50R12KT4G_13 |
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