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BAV116W 데이터시트(PDF) 2 Page - Diodes Incorporated |
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BAV116W 데이터시트(HTML) 2 Page - Diodes Incorporated |
2 / 4 page BAV116W Document number: DS30291 Rev. 12 - 2 2 of 4 www.diodes.com March 2016 © Diodes Incorporated BAV116W Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 130 V RMS Reverse Voltage VR(RMS) 90 V Forward Continuous Current IFM 215 mA Repetitive Peak Forward Current IFRM 500 mA Non-Repetitive Peak Forward Surge Current @ t = 1.0 s @ t = 1.0ms @ t = 1.0s IFSM 4.0 1.0 0.5 A Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 5) PD 250 mW Thermal Resistance Junction to Ambient Air (Note 5) RJA 500 °C/W Operating and Storage Temperature Range TJ, TSTG -65 to +150 °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition Reverse Breakdown Voltage (Note 6) V(BR)R 130 130 V IR = 100µA IR = 100µA, TJ =125°C Forward Voltage VF 0.90 1.0 1.1 1.25 1.0 V IF = 1.0mA, TJ = 25°C IF = 10mA, TJ = 25°C IF = 50mA, TJ = 25°C IF = 150mA, TJ = 25°C IF = 10mA, TJ = 125°C Leakage Current (Note 6) IR 5.0 80 nA nA VR = 75V, TJ = 25°C VR = 75V, TJ = 125°C Total Capacitance CT 2.4 5 pF VR = 0, f = 1.0MHz Reverse Recovery Time trr 3.0 µs IF = IR = 10mA, Irr = 0.1 x IR, RL = 100Ω Notes: 5. Part mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com. 6. Short duration pulse test used to minimize self-heating effect . 0 50 100 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C) Fig. 1 Power Derating Curve A 150 200 250 300 R = 500°C/W JA Fig. 2 Typical Forward Characteristics 0.001 0.01 0.1 1 10 100 1,000 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 V , INSTANTANEOUS FORWARD VOLTAGE (V) F T = 25°C A T = 85°C A T = 125°C A T = 150°C A |
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