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INA253 데이터시트(Datasheet) 5 Page - TI store

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부품명 INA253
상세내용  High Voltage, Bidirectional, Zero-Drift, Current-Shunt Monitor with Integrated 2-mΩ Precision Low Inductive Shunt Resistor
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5
INA253
www.ti.com
SLOS954 – MAY 2018
Product Folder Links: INA253
Submit Documentation Feedback
Copyright © 2018, Texas Instruments Incorporated
(1)
The internal shunt resistor is intended to be used with the internal amplifier and is not intended to be used as a stand-alone resistor. See
the Integrated Shunt Resistor section for more information.
(2)
See Maximum Continuous Current for additional information on the current derating and review layout recommendations to improve the
current handling capability of the device at higher temperatures.
(3)
System gain error includes amplifier gain error and the integrated sense resistor tolerance. System gain error does not include the stress
related characteristics of the integrated sense resistor. These characteristics are described in the Shunt Resistor section of the Electrical
Characteristics table
7.5 Electrical Characteristics
at TA = 25 °C, VS = 5 V, ISENSE = IS+ = 0 A, VCM = 12 V, and VREF1 = VREF2 = VS / 2 (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
INPUT
VCM
Common-mode input range
VIN+ = –4 V to 80 V, ISENSE = 0 A,
TA = – 40°C to +125°C
-4
80
V
CMR
Common-mode rejection
VIN+ = –4 V to 80 V, ISENSE = 0 A,
TA = –40°C to +125°C
±125
±500
µA/V
f = 50 kHz
±11
mA/V
IOS
Offset current, input-referred
ISENSE = 0 A
±2.5
±12.5
mA
dIOS/dT
Offset current drift
ISENSE = 0 A, TA = –40°C to +125°C
25
125
µA/°C
PSRR
Power-supply rejection ratio
VS = 2.7 V to 5.5 V, ISENSE = 0 A
±0.5
±5
mA/V
IB
Input bias current
IB+, IB–, ISENSE = 0 A
90
µA
Reference Input Range
0
VS
V
SHUNT RESISTOR
RSHUNT
Shunt resistance (SH+ to SH–)
Equivalent resistance when used with
onboard amplifier
1.998
2
2.002
m
Used as stand-alone resistor(1)
1.9
2
2.1
Package resistance
IS+ to IS–
4.5
m
Package Inductance
IS+ to IS–
3
nH
Resistor temperature coefficient
TA = –40°C to 125°C
15
ppm/°C
TA = –40°C to 0°C
50
TA = 0°C to 125°C
10
ppm/°C
ISENSE
Maximum continuous current(2)
TA = –40°C to 85°C
±15
A
Shunt short time overload
ISENSE = 30 A for 5 seconds
±0.05%
Shunt thermal shock
–65°C to 150°C, 500 cycles
±0.1%
Shunt resistance to solder heat
260°C solder, 10 seconds
±0.1%
Shunt high temperature exposure
1000 hours, TA = 150°C
±0.15%
Shunt cold temperature storage
24 hours, TA = –65°C
±0.025%
OUTPUT
G
Gain
INA253A1
100
mV/A
INA253A2
200
INA253A3
400
mV/A
System Gain error(3)
GND + 50 mV
≤ VOUT ≤ VS – 200
mV, TA = 25°C
±0.25%
±0.75%
TA = –40°C to +125°C
±0.5
±45
ppm/°C
Nonlinearity error
GND + 10 mV
≤ VOUT ≤ VS – 200 mV
±0.01%
Reference divider accuracy
VOUT = |(VREF1 – VREF2)| / 2 at ISENSE = 0
A, TA = –40°C to +125°C
0.02%
0.1%
RVRR
Reference voltage rejection ratio (input-
referred)
INA253A2
2.5
mA/V
INA253A1, INA253A3
1
Maximum capacitive load
No sustained oscillation
1
nF
VOLTAGE OUTPUT
Swing to VS power-supply rail
RL = 10 kΩ to GND,
TA = –40°C to +125°C
VS – 0.05
VS – 0.2
V
Swing to GND
RL = 10 kΩ to GND, ISENSE = 0 A,
VREF1=VREF2=0V, TA = –40°C to +125°C
VGND + 1
VGND + 10
mV




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