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2 / 20 page 2003 Nov 04 2 Philips Semiconductors Product specification Inverting Schmitt-triggers 74HC3G14; 74HCT3G14 FEATURES • Wide supply voltage range from 2.0 to 6.0 V • High noise immunity • Low power dissipation • Balanced propagation delays • Unlimited input rise and fall times • Very small 8 pins package • ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V. • Specified from −40 to +85 °C and −40 to +125 °C. APPLICATIONS • Wave and pulse shapers for highly noisy environments • Astable multivibrators • Monostable multivibrators • Output capability: standard. DESCRIPTION The 74HC3G/HCT3G14 is a high-speed Si-gate CMOS device. The 74HC3G/HCT3G14 provides three inverting buffers with Schmitt-trigger action. This device is capable of transforming slowly changing input signals into sharply defined, jitter-free output signals. QUICK REFERENCE DATA GND = 0 V; Tamb =25 °C; tr =tf ≤ 6.0 ns. Notes 1. CPD is used to determine the dynamic power dissipation (PD in µW). PD =CPD × VCC2 × fi × N+ Σ(CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in Volts; N = total switching outputs; Σ(CL × VCC2 × fo) = sum of the outputs. 2. For HC3G14 the condition is VI = GND to VCC. For HCT3G14 the condition is VI = GND to VCC − 1.5 V. SYMBOL PARAMETER CONDITIONS TYPICAL UNIT HC3G14 HCT3G14 tPHL/tPLH propagation delay nA to nY CL = 50 pF; VCC = 4.5 V 1621ns CI input capacitance 2 2 pF CPD power dissipation capacitance per buffer notes 1 and 2 10 10 pF |
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