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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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FDW2511NZ 데이터시트(PDF) 1 Page - Fairchild Semiconductor |
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FDW2511NZ 데이터시트(HTML) 1 Page - Fairchild Semiconductor |
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1 / 11 page  ©2004 Fairchild Semiconductor Corporation FDW2511NZ Rev. A December 2004 www.fairchildsemi.com 1 FDW2511NZ Dual N-Channel 2.5V Specified PowerTrench® MOSFET Features ! 7.1A, 20V rDS(ON) =0.020Ω, VGS = 4.5V rDS(ON) =0.025Ω, VGS = 2.5V ! Extended V GS range (±12 V) for battery applications ! HBM ESD Protection Level of 3.5kV Typical (note 3) ! High performance trench technology for extremely low rDS(ON) ! Low profile TSSOP-8 package Applications ! Load switch ! Battery charge ! Battery disconnect circuits General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications. TSSOP-8 D1 G1 S1 D2 G2 S2 S2 G2 D2 S2 G1 S1 S1 D1 Pin 1 |
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