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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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FMBM5551 데이터시트(PDF) 2 Page - Fairchild Semiconductor |
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FMBM5551 데이터시트(HTML) 2 Page - Fairchild Semiconductor |
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2 / 4 page  2 www.fairchildsemi.com FMBM5551 Rev. D Electrical Characteristics (Continued) T C = 25°C unless otherwise noted Symbol Parameter Conditions Min. Max Units hFE3 DC Current Gain VCE = 5V, IC = 50mA 30 DIVID3 Variation Ratio of hFE3 Between Die 1 and Die 2 hFE3(Die1)/hFE3(Die2) 0.9 1.1 VCE(sat) Collector-Emitter Saturation Voltage IC = 10mA, IB = 1mA IC = 50mA, IB = 5mA 0.15 0.2 V V VBE(sat) Base-Emitter Saturation Voltage IC = 10mA, IB = 1mA IC = 50mA, IB = 5mA 1 1 V V VBE(on) Base-Emitter On Voltage VCE = 5V, IC = 10mA 1 V DEL Difference of VBE(on) Between Die1 and Die 2 VBE(on)(Die1)-VBE(on)(Die2) -8 8 mV Small Signal Characteristics Cob Output Capacitance VCB = 10V, f = 1MHz 6 pF Cib Input Capacitance VCB = 0.5V, f = 1MHz 20 pF fT Current Gain Bandwidth Product VCE = 10V, IC = 10mA, f = 100MHz 100 300 MHz NF Noise Figure VCE = 5V, IC = 200µA, f = 1MHz, RS = 20KΩ, B = 200Hz 8dB hfe Small Signal Current Gain VCE = 10V, IC = 1.0mA, f = 1.0KHz 50 250 |
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유사한 설명 - FMBM5551 |
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