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PESD3V3V4UW 데이터시트(PDF) 4 Page - NXP Semiconductors |
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PESD3V3V4UW 데이터시트(HTML) 4 Page - NXP Semiconductors |
4 / 11 page 9397 750 14481 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 22 April 2005 4 of 11 Philips Semiconductors PESDxV4UW series Very low capacitance quadruple ESD protection diode arrays 6. Characteristics [1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5; see Figure 1. [2] Measured from pin 1, 3, 4 or 5 to 2. Table 8: Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Per diode VRWM reverse stand-off voltage PESD3V3V4UW - - 3.3 V PESD5V0V4UW - - 5.0 V IRM reverse leakage current see Figure 6; PESD3V3V4UW VRWM = 3.3 V - 40 300 nA PESD5V0V4UW VRWM = 5.0 V - 3 25 nA VBR breakdown voltage IR = 1 mA PESD3V3V4UW 5.3 5.6 5.9 V PESD5V0V4UW 6.4 6.8 7.2 V Cd diode capacitance f = 1 MHz; see Figure 5; PESD3V3V4UW VR = 0 V - 15 18 pF VR = 3.3 V - 9 12 pF PESD5V0V4UW VR = 0 V - 12 15 pF VR = 5 V - 6 9 pF VCL clamping voltage [1] [2] PESD3V3V4UW IPP = 1 A - - 9 V IPP = 2 A - - 11 V PESD5V0V4UW IPP = 1 A - - 11 V IPP = 1.7 A - - 13 V rdif differential resistance IR = 1 mA PESD3V3V4UW - - 200 Ω PESD5V0V4UW - - 100 Ω |
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