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PMEG3015EV 데이터시트(HTML) 3 Page - NXP Semiconductors

부품명 PMEG3015EV
상세내용  30 V, 1.5 A ultra low VF MEGA Schottky barrier rectifier in SOT666 package
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제조사  PHILIPS [NXP Semiconductors]
홈페이지  http://www.nxp.com
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PMEG3015EV 데이터시트(HTML) 3 Page - NXP Semiconductors

 
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© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 4 April 2005
3 of 10
Philips Semiconductors
PMEG3015EV
30 V, 1.5 A ultra low VF MEGA Schottky barrier rectifier
5.
Limiting values
[1]
For SOT666 only valid, if pins 3 and 4 are connected in parallel.
[2]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[3]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for cathode 1 cm2.
6.
Thermal characteristics
[1]
For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse
power losses PR are a significant part of the total power losses. Nomograms for determining the reverse
power losses PR and IF(AV) rating will be available on request.
[2]
Reflow soldering is the only recommended soldering method.
[3]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[4]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for cathode 1 cm2.
Table 5:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VR
reverse voltage
-
30
V
IF
forward current
Tsp ≤ 55 °C
-
1.5
A
IFRM
repetitive peak forward current
tp ≤ 1 ms; δ≤ 0.25
[1] -
4.5
A
IFSM
non-repetitive peak forward
current
tp = 8 ms; square
wave
[1] -
9.5
A
Ptot
total power dissipation
Tamb ≤ 25 °C
[2] -
0.31
W
[3] -
0.58
W
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
−65
+150
°C
Tstg
storage temperature
−65
+150
°C
Table 6:
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-a)
thermal resistance from junction
to ambient
in free air
[1] [2]
[3] -
-
405
K/W
[4] -
-
215
K/W
Rth(j-sp)
thermal resistance from junction
to solder point
--80
K/W


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