SI7366DP-T1 datasheet(2/5 Pages) VISHAY

부품명	SI7366DP-T1

상세설명	N-Channel 20-V (D-S) MOSFET

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Si7366DP

Vishay Siliconix

New Product

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Document Number: 72296

S-31414—Rev. A, 07-Jul-03

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 mA

1.0

3.0

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "20 V

"100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 16 V, VGS = 0 V

1

mA

Zero Gate Voltage Drain Current

IDSS

VDS = 16 V, VGS = 0 V, TJ = 55_C

5

mA

On-State Drain Currenta

ID(on)

VDS w 5 V, VGS = 10 V

30

A

Drain-Source On-State Resistancea

rDS(on)

VGS = 10 V, ID = 20 A

0.0045

0.0055

W

Drain-Source On-State Resistancea

rDS(on)

VGS = 4.5 V, ID = 16 A

0.0072

0.009

W

Forward Transconductancea

gfs

VDS = 6 V, ID = 20 A

48

S

Diode Forward Voltagea

VSD

IS = 4.5 A, VGS = 0 V

0.76

1.1

V

Dynamicb

Total Gate Charge

Qg

16

25

Gate-Source Charge

Qgs

VDS = 10 V, VGS = 4.5 V, ID = 20 A

6

nC

Gate-Drain Charge

Qgd

5.2

Gate Resistance

Rg

1.8

W

Turn-On Delay Time

td(on)

21

32

Rise Time

tr

VDD = 10 V, RL = 10 W

16

25

Turn-Off Delay Time

td(off)

VDD = 10 V, RL = 10 W

ID ^ 1 A, VGEN = 10 V, RG = 6 W

58

90

ns

Fall Time

tf

15

23

Source-Drain Reverse Recovery Time

trr

IF = 4.1 A, di/dt = 100 A/ms

40

80

Notes

a.

Pulse test; pulse width v 300 ms, duty cycle v 2%.

b.

Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0

10

20

30

40

50

60

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

0

10

20

30

40

50

60

012345

VGS = 10 thru 4 V

25_C

TC = 125_C

−55_C

Output Characteristics

Transfer Characteristics

VDS − Drain-to-Source Voltage (V)

VGS − Gate-to-Source Voltage (V)

3 V

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