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FMBS5551 데이터시트(PDF) 3 Page - Fairchild Semiconductor |
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FMBS5551 데이터시트(HTML) 3 Page - Fairchild Semiconductor |
3 / 6 page ©2004 Fairchild Semiconductor Corporation Rev. A1, November 2004 Typical Characteristics Figure 1. Typical Pulsed Current Gain vs Collector Current Figure 2. Collector-Emitter Saturation Voltage vs Collector Current Figure 3. Base-Emitter Saturation Voltage vs Collector Current Figure 4. Base-Emitter On Voltage vs Collector Current Figure 5. Collector Cutoff Current vs Ambient Temperature Figure 6. Collector-Emitter Breakdown Voltage with Resistance Between Emitter-Base Ω vs Collector Current 0.1 0.2 0.5 1 2 5 10 20 50 100 0 50 100 150 200 250 I - COLLECTOR CURRENT (mA) C 125 °C 25 °C - 40 °C V = 5V CE β β Ω Voltage vs Collector Current 110 100 200 0 0.1 0.2 0.3 0.4 0.5 I - COLLECTOR CURRE NT (mA) C 25 °C - 40 °C 125 °C β = 10 β Ω β Voltage vs Collector Current 110 100 200 0 0.2 0.4 0.6 0.8 1 I - COLLECTOR CURRE NT (mA) β = 10 25 °C - 40 °C 125 °C Ω β β Collector Current 0.1 1 10 100 200 0 0.2 0.4 0.6 0.8 1 I - COLLECTOR CURRE NT (mA) C V = 5V CE 25 °C - 40 °C 125 °C Ω 25 50 75 100 125 1 10 50 T - AMBIE NT TEMP ERATURE ( C) A ° V = 100V CB β β Between Emitter-Base 0.1 1 10 100 1000 160 180 200 220 240 260 RESISTANCE (k ) Ω I = 1.0 mA C β β |
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