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IRF6646 데이터시트(PDF) 2 Page - International Rectifier

부품명 IRF6646
상세설명  DirectFET Power MOSFET
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제조업체  IRF [International Rectifier]
홈페이지  http://www.irf.com
Logo IRF - International Rectifier

IRF6646 데이터시트(HTML) 2 Page - International Rectifier

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Notes:
Pulse width
≤ 400µs; duty cycle ≤ 2%.
Repetitive rating; pulse width limited by max. junction temperature.
Thermally limited and used Rθja to calculate.
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
80
–––
–––
V
∆ΒVDSS/∆TJ
Breakdown Voltage Temp. Coefficient
–––
0.10
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
7.6
9.5
m
VGS(th)
Gate Threshold Voltage
2.8
–––
4.8
V
∆VGS(th)/∆TJ
Gate Threshold Voltage Coefficient
–––
-11
––– mV/°C
IDSS
Drain-to-Source Leakage Current
–––
–––
20
µA
–––
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
Gate-to-Source Reverse Leakage
–––
–––
-100
gfs
Forward Transconductance
17
–––
–––
S
Qg
Total Gate Charge
–––
36
50
Qgs1
Pre-Vth Gate-to-Source Charge
–––
7.6
–––
Qgs2
Post-Vth Gate-to-Source Charge
–––
2.0
–––
nC
Qgd
Gate-to-Drain Charge
–––
12
Qgodr
Gate Charge Overdrive
–––
14
–––
See Fig. 17
Qsw
Switch Charge (Qgs2 + Qgd)
–––
14
–––
Qoss
Output Charge
–––
18
–––
nC
RG
Gate Resistance
–––
1.0
–––
td(on)
Turn-On Delay Time
–––
17
–––
tr
Rise Time
–––
20
–––
td(off)
Turn-Off Delay Time
–––
31
–––
ns
tf
Fall Time
–––
12
–––
Ciss
Input Capacitance
–––
2060
–––
Coss
Output Capacitance
–––
480
–––
pF
Crss
Reverse Transfer Capacitance
–––
120
–––
Coss
Output Capacitance
–––
2180
–––
Coss
Output Capacitance
–––
310
–––
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
–––
2.5
(Body Diode)
A
ISM
Pulsed Source Current
–––
–––
96
(Body Diode)
VSD
Diode Forward Voltage
–––
–––
1.3
V
trr
Reverse Recovery Time
–––
36
54
ns
Qrr
Reverse Recovery Charge
–––
48
72
nC
ID = 7.2A
VDS = 64V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS = 10V
VDS = 10V, ID = 7.2A
VDS = 40V
TJ = 25°C, IF = 7.2A, VDD = 40V
di/dt = 100A/µs
TJ = 25°C, IS = 7.2A, VGS = 0V
showing the
integral reverse
p-n junction diode.
VDS = VGS, ID = 150µA
VDS = 80V, VGS = 0V
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 12A
VDS = 16V, VGS = 0V
VDD = 40V, VGS = 10V
VGS = 0V
ƒ = 1.0MHz
ID = 7.2A
MOSFET symbol
RG=6.2Ω
VDS = 25V
Conditions
VGS = 0V, VDS = 64V, f=1.0MHz
VGS = 0V, VDS = 1.0V, f=1.0MHz


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