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L6668TR 데이터시트(PDF) 5 Page - STMicroelectronics |
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L6668TR 데이터시트(HTML) 5 Page - STMicroelectronics |
5 / 23 page 5/23 L6668 REFERENCE VOLTAGE VREF Output voltage (2) Tj = 25 °C; IREF = 1 mA 4.925 5 5.075 V VREF Total variation Vcc= 9.4 to 22 V, IREF = 1 to 5 mA 4.8 5.13 V IREF Short circuit current VREF = 0 10 30 mA Sink capability in UVLO Vcc = 6V; Isink = 0.5 mA 0.2 0.5 V PWM CONTROL VCOMPH Maximum level ICOMP =0 5.5 V ICOMP Max. source current VCOMP = 1 V 320 400 480 µA RCOMP Dynamic resistance VCOMP = 2 to 4 V 22 k Ω Dmax Maximum duty cycle VCOMP = 5 V 70 75 % Dmin Minimum duty cycle VCOMP = 1 V 0 % CURRENT SENSE COMPARATOR IISEN Input Bias Current VISEN = 0 -1 µA tLEB Leading Edge Blanking After gate drive low-to-high transition 160 225 290 ns td(H-L) Delay to Output 100 ns Gain 3.56 3.75 3.94 V/V VISENx Maximum signal VCOMP = 5 V 0.725 0.8 0.875 V VISENdis Hiccup-mode OCP level (2) 1.35 1.5 1.65 V STANDBY FUNCTION Vdrop VCOMP - VSTBY ISTBY = 0.8 mA, VCOMP<3V 35 mV Vth Threshold on VCOMP (2) Voltage falling 3V Hysteresis 50 mV LATCHED DISABLE FUNCTION IDIS Input Bias Current VDIS = 0 to Vth -1 µA Vth Disable threshold (2) voltage rising 2.1 2.2 2.3 V OSCILLATOR fsw Oscillation Frequency Tj = 25°C, VCOMP = 5 V 95 100 105 kHz Vcc = 9.4 to 22V, VCOMP = 5 V 93 100 107 kHz Vpk Oscillator peak voltage (2) 2.8533.15 V Vvy Oscillator valley voltage (2) 0.75 0.9 1.05 V SLOPE COMPENSATION S-COMPpk Ramp peak RS-COMP = 3 k Ω to GND, OUT pin high, VCOMP = 5 V 1.61.751.9 V S-COMPvy Ramp starting value RS-COMP = 3 k Ω to GND, OUT pin high 0.15 0.35 0.55 V Ramp voltage OUT pin low 0 Source capability VS-COMP = VS-COMPpk 0.8 mA SOFT-START ISSC Charge current Tj = 25 °C 14 20 26 µA Table 5. Electrical Characteristcs (continued) (Tj = 0 to 105°C, Vcc=15V, Co=1nF; RT =13.3k , CT =1nF; unless otherwise specified) Symbol Parameter Test Condition Min. Typ. Max. Unit |
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