MMJX1H40N150 datasheet(1/5 Pages) IXYS

부품명	MMJX1H40N150

상세설명	1500V MOS Gated Thyristor

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제조업체	IXYS [IXYS Corporation]

홈페이지	http://www.ixys.com

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1500V MOS Gated

Thyristor

V

DM

= 1500V

Symbol

Test Conditions

Maximum Ratings

V

DM

T

J

= 25°C to 150°C

1500

V

GK

Continuous

±30

V

GK

Transient

±40

V

I

TSM

T

C

= 25°C, 1μs

15.5

kA

T

C

= 25°C, 10μs

6.4

kA

P

D

T

C

= 25°C

320

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

Maximum Lead Temperature for Soldering

300

°C

T

SOLD

1.6 mm (0.062 in.) from Case for 10s

260

°C

V

ISOL

50/60Hz, 1 minute

2500

V~

F

C

Mounting Force

50..200/11..45

N/lb

Weight

5

g

DS100594C(12/17)

Features



Silicon Chip on Direct-Copper Bond

(DCB) Substrate



Isolated Mounting Surface



2500V~ Electrical Isolation



Very High Current Capability

Advantages



High Power Density



Low Gate Drive Requirement

Applications



Capacitive Discharge Circuits



Ignition Circuits



Solid State Surge Protection

(Electrically Isolated Tab)

MMJX1H40N150

K

A

G

G = Gate

K = Cathode

A = Anode

Ks = Cathode Sense

G

K

A

K

A

G

Isolated Tab

Symbol

Test Conditions

Characteristic Values

(T

J = 25C, Unless Otherwise Specified)

Min.

Typ.

Max.

V

BR

I

A

= 250

A, V

GK = 0V

1500

V

GK(th)

I

A

= 250μA, V

AK = VGK

2.5

5.0

V

T

I

T

= 1000A, V

GK = 15V

4.75

6.0

V

r

T

I

T

> I

L, VGK = 15V

1.20

m



V

BO

V

GK = 15V

5.25

V

I

D

V

AK = 1500V, VGK = 0V

15

A

T

J = 125C

1.5 mA

I

L

250

A

I

H

200

A

I

GKS

V

AK = 0V, VGK = 30V

200

nA

Ks

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MMJX1H40N150 데이터시트(PDF) 1 Page - IXYS Corporation

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