SI1907DL datasheet(2/3 Pages) VISHAY

부품명	SI1907DL

상세설명	Dual P-Channel 1.8-V (G-S) MOSFET

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제조업체	VISHAY [Vishay Siliconix]

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Vishay Siliconix

SPICE Device Model Si1907DL

www.vishay.com

Document Number: 71526

S-50232

Rev. B, 28-Feb-05

SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Simulated

Data

Measured

Data

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = −250 µA

0.78

V

On-State Drain Current

a

ID(on)

VDS = −5 V, VGS = −4.5 V

5.8

A

VGS = −4.5 V, ID = −0.53 A

0.54

0.57

VGS = −2.5 V, ID = −0.44 A

0.77

0.80

Drain-Source On-State Resistance

a

rDS(on)

VGS = −1.8 V, ID = −0.20 A

1.05

1.25

Ω

Forward Transconductance

a

gfs

VDS = −10 V, ID = −0.53 A

1.19

1.1

S

Diode Forward Voltage

a

VSD

IS = −0.23 A, VGS = 0 V

−0.76

−0.80

V

Dynamic

b

Total Gate Charge

Qg

0.72

1.5

Gate-Source Charge

Qgs

0.14

0.40

Gate-Drain Charge

Qgd

VDS = −6 V, VGS = −4.5 V, ID = −0.53 A

0.12

0.25

nC

Turn-On Delay Time

td(on)

6

Rise Time

tr

7

20

Turn-Off Delay Time

td(off)

23

10

Fall Time

tf

VDD = −6 V, RL = 12 Ω

ID ≅ −0.50 A, VGEN = −4.5 V, RG = 6 Ω

7

10

Source-Drain Reverse Recovery Time

trr

IF = −0.23 A, di/dt = 100 µs

15

20

ns

Notes

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2%.

b. Guaranteed by design, not subject to production testing.

유사한 부품 번호 - SI1907DL

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More results

유사한 설명 - SI1907DL

제조업체	부품명	데이터시트	상세설명
Vishay Siliconix	SI6973DQ	66Kb / 4P	Dual P-Channel 1.8-V (G-S) MOSFET Rev. A, 22-May-00
	SI4965DY	62Kb / 4P	Dual P-Channel 1.8-V (G-S) MOSFET Rev. B, 13-Oct-03
	SI4967DY	62Kb / 4P	Dual P-Channel 1.8-V (G-S) MOSFET Rev. C, 13-Oct-03
	SI5935DC	73Kb / 5P	Dual P-Channel 1.8-V (G-S) MOSFET Rev. A, 16-Jun-03
	SI5935DC-T1-E3	233Kb / 10P	Dual P-Channel 1.8 V (G-S) MOSFET Rev. C, 19-Apr-10
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	SI4967DY	103Kb / 5P	Dual P-Channel 1.8-V (G-S) MOSFET 01-Jan-2022
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More results

SI1907DL 데이터시트(PDF) 2 Page - Vishay Siliconix

SI1907DL 데이터시트(HTML) 2 Page - Vishay Siliconix

유사한 부품 번호 - SI1907DL

유사한 설명 - SI1907DL

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