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DS42514 데이터시트(HTML) 33 Page - Advanced Micro Devices

부품명 DS42514
상세내용  Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
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제조사  AMD [Advanced Micro Devices]
홈페이지  http://www.amd.com
Logo AMD - Advanced Micro Devices

DS42514 데이터시트(HTML) 33 Page - Advanced Micro Devices

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DS42514
33
Notes:
1. The I
CC current listed is typically less than 2 mA/MHz, with OE# at VIH.
2. Maximum I
CC specifications are tested with VCC = VCCmax.
3. I
CC active while Embedded Erase or Embedded Program is in progress.
4. Automatic sleep mode enables the low power mode when addresses remain stable for t
ACC + 30 ns. Typical sleep mode current is
200 nA.
5. Not 100% tested.
VHH
Voltage for WP#/ACC Program
Acceleration and Sector
Protection/Unprotection
8.5
9.5
V
VID
Voltage for Sector Protection,
Autoselect and Temporary Sector
Unprotect
8.5
12.5
V
VOL
Output Low Voltage
I
OL = 4.0 mA, VCCf = VCCs =
V
CC min
0.45
V
V
OH1
Output High Voltage
I
OH = –2.0 mA, VCCf = VCCs =
VCC min
0.85 x
VCC
V
V
OH2
I
OH = –100 µA, VCC = VCC min
V
CC–0.4
V
LKO
Flash Low VCC Lock-Out Voltage
(Note 5)
2.3
2.5
V
SRAM DC AND OPERATING CHARACTERISTICS
Parameter
Symbol
Parameter Description
Test Conditions
Min
Typ
Max
Unit
ILI
Input Leakage Current
VIN = VSS to VCC
–1.0
1.0
µA
I
LO
Output Leakage Current
CE1#s = V
IH, CE2s = VIL or OE# =
V
IH or WE# = VIL, VIO= VSS to VCC
–1.0
1.0
µA
I
CC
Operating Power Supply Current
I
IO = 0 mA, CE1#s = VIL, CE2s =
WE# = V
IH, VIN = VIH or VIL
3mA
I
CC1s
Average Operating Current
Cycle time = 1 µs, 100% duty,
I
IO = 0 mA, CE1#s ≤ 0.2 V,
CE2
≥ V
CC – 0.2 V, VIN ≤ 0.2 V or
V
IN ≥ VCC – 0.2 V
5mA
ICC2s
Average Operating Current
Cycle time = Min., I
IO = 0 mA,
100% duty, CE1#s = VIL, CE2s =
V
IH, VIN = VIL = or VIH
45
mA
V
OL
Output Low Voltage
I
OL = 2.1 mA
0.4
V
V
OH
Output High Voltage
I
OH = –1.0 mA
2.4
V
ISB
Standby Current (TTL)
CE1#s = V
IH, CE2 = VIL, Other
inputs = V
IH or VIL
0.3
mA
ISB1
Standby Current (CMOS)
CE1#s
≥ V
CC – 0.2 V, CE2 ≥ VCC
0.2 V (CE1#s controlled) or CE2
0.2 V (CE2s controlled), CIOs =
V
SS or VCC, Other input = 0 ~ VCC
12
µA
DC CHARACTERISTICS (Continued)
CMOS Compatible
Parameter
Symbol
Parameter Description
Test Conditions
Min
Typ
Max
Unit


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