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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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DS42514 데이터시트(HTML) 47 Page - Advanced Micro Devices |
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DS42514 데이터시트(HTML) 47 Page - Advanced Micro Devices |
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DS42514 47 AC CHARACTERISTICS Alternate CE#f Controlled Erase and Program Operations Notes: 1. Not 100% tested. 2. See the “Flash Erase And Programming Performance” section for more information. Parameter 85 ns Speed JEDEC Std Description Min Typ Max Unit t AVAV t WC Write Cycle Time (Note 1) 85 ns t AVWL t AS Address Setup Time (WE# to Address) 0 ns t ASO Address Setup Time to CE#f Low During Toggle Bit Polling 15 ns t ELAX t AH Address Hold Time 45 ns t AHT Address Hold time from CE#f or OE# High During Toggle Bit Polling 0ns tDVEH tDS Data Setup Time 35 ns tEHDX tDH Data Hold Time 0 ns t GHEL t GHEL Read Recovery Time Before Write (OE# High to WE# Low) 0ns t WLEL t WS WE# Setup Time 0 ns t EHWH t WH WE# Hold Time 0 ns t ELEH t CP CE#f Pulse Width 35 ns t EHEL t CPH CE#f Pulse Width High 35 ns t WHWH1 t WHWH1 Programming Operation (Note 2) Byte 5 µs Word 7 t WHWH1 t WHWH1 Accelerated Programming Operation, Word or Byte (Note 2) 4µs t WHWH2 t WHWH2 Sector Erase Operation (Note 2) 0.7 sec |
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