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DS42514 데이터시트(HTML) 51 Page - Advanced Micro Devices

부품명 DS42514
상세내용  Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
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제조사  AMD [Advanced Micro Devices]
홈페이지  http://www.amd.com
Logo AMD - Advanced Micro Devices

DS42514 데이터시트(HTML) 51 Page - Advanced Micro Devices

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DS42514
51
AC CHARACTERISTICS
SRAM Write Cycle
Notes:
1. WE# controlled, if CIOs is low, ignore UB#s and LB#s timing.
2. t
CW is measured from CE1#s going low to the end of write.
3. tWR is measured from the end of write to the address change. tWR applied in case a write ends as CE1#s or WE# going high.
4. t
AS is measured from the address valid to the beginning of write.
5. A write occurs during the overlap (t
WP) of low CE#1 and low WE#. A write begins when CE1#s goes low and WE# goes low when
asserting UB#s or LB#s for a single byte operation or simultaneously asserting UB#s and LB#s for a double byte operation. A
write ends at the earliest transition when CE1#s goes high and WE# goes high. The tWP is measured from the beginning of write
to the end of write.
Figure 30.
SRAM Write Cycle—WE# Control
Parameter
Symbol
Description
Min
Max
Unit
t
WC
Write Cycle Time
85
ns
t
Cw
Chip Enable to End of Write
70
ns
t
AS
Address Setup Time
0
ns
t
AW
Address Valid to End of Write
70
ns
t
BW
UB#s, LB#s to End of Write
70
ns
t
WP
Write Pulse Time
60
ns
t
WR
Write Recovery Time
0
ns
t
WHZ
Write to Output High-Z
0
25
ns
t
DW
Data to Write Time Overlap
35
ns
t
DH
Data Hold from Write Time
0
ns
t
OW
End Write to Output Low-Z
5
ns
Address
CS1#s
Data Undefined
UB#s, LB#s
WE#
Data In
Data Out
tWC
tCW
(See Note 1)
tAW
High-Z
High-Z
Data Valid
CS2s
tCW
(See Note 1)
tBW
tWP
(See Note 4)
tAS
(See Note 3)
tWR (See Note 2)
tBW
tDW
tDH
tOW


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