전자부품 데이터시트 검색엔진 |
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AOK20S60 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited |
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AOK20S60 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc website:www.iscsemi.cn isc & iscsemi is registered trademark 2 isc N-Channel MOSFET Transistor AOK20S60 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA 600 V VGS(th) Gate Threshold Voltage VDS=5V; ID=0.25mA 2.8 4.1 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID=10A 0.18 0.20 Ω IGSS Gate-Source Leakage Current VGS= ±30V;VDS= 0V ± 0.1 μ A IDSS Drain-Source Leakage Current VDS= 600V; VGS= 0V;Tc=25℃ VDS= 480V; VGS= 0V;Tc=150℃ 1 10 μ A VSDF Diode forward voltage ISD=10A, VGS = 0 V 0.84 V |
유사한 부품 번호 - AOK20S60 |
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유사한 설명 - AOK20S60 |
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