2N2907AUB datasheet(2/4 Pages) TTELEC

부품명	2N2907AUB

상세설명	Surface Mount PNP General Purpose Transistor

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General Note

TT Electronics reserves the right to make changes in product speciﬁcation without

notice or liability. All information is subject to TT Electronics’ own data and is

considered accurate at time of going to print.

Surface Mount PNP General

Purpose Transistor

2N2907AUB (TX, TXV)

Issue D

08/2016

Page 2

OPTEK Technology, Inc.

1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200

www.optekinc.com | www.ttelectronics.com

Absolute Maximum Ratings (TA = 25° C unless otherwise noted)

Collector‐Base Voltage

60V

Collector‐Emi er Voltage

60V

Emi er‐Base Voltage

5.0V

Collector Current‐Con nuous

600mA

Opera ng Junc on Temperature (TJ) ‐65° C to +200 °C

Storage Junc on Temperature (Tstg) ‐65° C to +200° C

Power Dissipa on @ TA = 25°C

0.5 W

Power Dissipa on @ Tc = 25° C

1.00 W

(1)

Soldering Temperature (vapor phase reﬂow for 30 seconds)

215° C

Soldering Temperature (heated collet for 5 seconds)

260° C

Electrical Speciﬁcations

Electrical Characteristics (TA = 25° C unless otherwise noted)

SYMBOL

PARAMETER

MIN

MAX

UNITS

TEST CONDITIONS

OFF CHARACTERISTICS

V(BR)CBO

Collector‐Base Breakdown Voltage

60 ‐

V

IC = 10 µA, IE = 0

V(BR)CEO

Collector‐Emi er Breakdown Voltage

60 ‐

V

IC = 10 mA, IB = 0

(2)

V(BR)EBO

Emi er‐Base Breakdown Voltage

5.0 ‐

V

IE = 10 µA, IC = 0

ICBO

Collector‐Base Cutoﬀ Current

10

µA

VCB = 50 V, IE = 0

10

µA

VCB = 50 V, IE = 0, TA = 150° C

IEBO

Emi er‐Base Cutoﬀ Current

10

µA

VCE = 4.0 V, IC = 0

ICES

Collector Emi er Cutoﬀ Current

10

nA

VEB = 50 V

ON CHARACTERISTICS

hFE

75

‐

VCE = 10 V, IC = 0.1 mA

100

450 ‐

VCE = 10 V, IC = 1.0 mA

100

‐

VCE = 10 V, IC = 10 mA

100

300 ‐

VCE = 10 V, IC = 150 mA

(2)

50

‐

VCE = 10 V, IC = 500 mA

(2)

50

‐

VCE = 10 V, IC = 1.0 mA, TA = ‐55°C

Forward‐Current Transfer Ra o

Note:

1. Derate linearly 6.6 mW/°C above 25° C

2. Pulse Width ≤300 µs, Duty Cycle ≤ 2.0%

유사한 부품 번호 - 2N2907AUB

제조업체	부품명	데이터시트	상세설명
Semicoa Semiconductor	2N2907AUB	31Kb / 1P	Chip Type 2C2907A Geometry 0600 Polarity PNP
Semicoa Semiconductor	2N2907AUB	47Kb / 2P	Type 2N2907AUB Geometry 0600 Polarity PNP
Microsemi Corporation	2N2907AUB	68Kb / 2P	PNP SMALL SIGNAL SILICON TRANSISTOR
Semicoa Semiconductor	2N2907AUB	235Kb / 2P	Silicon PNP Transistor
Microsemi Corporation	2N2907AUB	105Kb / 6P	RADIATION HARDENED

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유사한 설명 - 2N2907AUB

제조업체	부품명	데이터시트	상세설명
Micropac Industries	61083	83Kb / 2P	SURFACE MOUNT (PNP) GENERAL PURPOSE TRANSISTOR
Micropac Industries	61089	82Kb / 2P	SURFACE MOUNT (PNP) GENERAL PURPOSE TRANSISTOR
ON Semiconductor	MSB709-RT1	111Kb / 4P	PNP General Purpose Amplifier Transistor Surface Mount REV 3
E-Tech Electronics LTD	MSB709	78Kb / 1P	PNP General Purpose Amplifier Transistor Surface Mount
ON Semiconductor	MSB710-RT1G	38Kb / 2P	PNP General Purpose Amplifier Transistor Surface Mount January, 2006 ??Rev. 4
Leshan Radio Company	MSB709-RT1	40Kb / 1P	PNP General Purpose Amplifier Transistor Surface Mount
ON Semiconductor	MSB709-RT1G	39Kb / 4P	PNP General Purpose Amplifier Transistor Surface Mount June, 2005 ??Rev. 6
E-Tech Electronics LTD	MSB710	75Kb / 1P	PNP General Purpose Amplifier Transistor Surface Mount
Leshan Radio Company	MSB710-RT1	38Kb / 1P	PNP General Purpose Amplifier Transistor Surface Mount
Leshan Radio Company	LMSB709LT1	44Kb / 2P	PNP General Purpose Amplifier Transistor Surface Mount

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