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TC58NS256DC 데이터시트(HTML) 2 Page - Toshiba Semiconductor

부품명 TC58NS256DC
상세내용  TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT (32M ®8 BITS) CMOS NAND E2PROM (32M BYTE SmartMediaTM)
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제조사  TOSHIBA [Toshiba Semiconductor]
홈페이지  http://www.semicon.toshiba.co.jp/eng
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TC58NS256DC 데이터시트(HTML) 2 Page - Toshiba Semiconductor

 
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TC58NS256DC
2000-08-27
2/33
BLOCK DIAGRAM
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
RATING
UNIT
VCC
Power Supply Voltage
−0.6~4.6
V
VIN
Input Voltage
−0.6~4.6
V
VI/O
Input/Output Voltage
−0.6 V~VCC + 0.3 V (≤ 4.6 V)
V
PD
Power Dissipation
0.3
W
Tstg
Storage Temperature
−20~65
°C
Topr
Operating Temperature
0~55
°C
CAPACITANCE *(Ta
==== 25°C, f ==== 1 MHz)
SYMBOL
PARAMETER
CONDITION
MIN
MAX
UNIT
CIN
Input
VIN = 0 V
10
pF
COUT
Output
VOUT = 0 V
10
pF
* This parameter is periodically sampled and is not tested for every device.
I/O control circuit
Status register
Address register
Command register
Column buffer
Column decoder
Data register
Sense amp
Memory cell array
Control circuit
HV generator
Logic control
BY
/
RY
VCC
I/O1
VSS
I/O8
WP
CE
CLE
ALE
WE
RE
BY
/
RY
Extended area
(embedded ID)
• The products described in this document are subject to the foreign exchange and foreign trade laws.
• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by
TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its
use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or
others.
• The information contained herein is subject to change without notice.
000707EBA2


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