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TC58NS256DC 데이터시트(HTML) 3 Page - Toshiba Semiconductor

부품명 TC58NS256DC
상세내용  TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT (32M ®8 BITS) CMOS NAND E2PROM (32M BYTE SmartMediaTM)
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제조사  TOSHIBA [Toshiba Semiconductor]
홈페이지  http://www.semicon.toshiba.co.jp/eng
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TC58NS256DC 데이터시트(HTML) 3 Page - Toshiba Semiconductor

 
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TC58NS256DC
2000-08-27
3/33
VALID BLOCKS (1)
SYMBOL
PARAMETER
MIN
TYP.
MAX
UNIT
NVB
Number of Valid Blocks
2008
2048
Blocks
(1) The TC58NS256 occasionally contains unusable blocks. Refer to Application Note 14 toward the end of this document.
RECOMMENDED DC OPERATING CONDITIONS
SYMBOL
PARAMETER
MIN
TYP.
MAX
UNIT
VCC
Power Supply Voltage
3
3.3
3.6
V
VIH
High Level Input Voltage
2
VCC + 0.3
V
VIL
Low Level Input Voltage
−0.3*
0.8
V
*
−2 V (pulse width ≤ 20 ns)
DC CHARACTERISTICS (Ta
==== 0°~55°C, VCC ==== 3.3 V ±±±± 0.3 V)
SYMBOL
PARAMETER
CONDITION
MIN
TYP.
MAX
UNIT
IIL
Input Leakage Current
VIN = 0 V~VCC
±10
µA
ILO
Output Leakage Current
VOUT = 0.4 V~VCC
±10
µA
ICCO1
Operating Current (Serial Read)
CE
= VIL, IOUT = 0 mA,
tcycle = 50 ns
10
30
mA
ICCO3
Operating Current
(Command Input)
tcycle = 50 ns
10
30
mA
ICCO4
Operating Current (Data Input)
tcycle = 50 ns
10
30
mA
ICCO5
Operating Current
(Address Input)
tcycle = 50 ns
10
30
mA
ICCO7
Programming Current
10
30
mA
ICCO8
Erasing Current
10
30
mA
ICCS1
Standby Current
CE
= VIH
1
mA
ICCS2
Standby Current
CE
= VCC − 0.2 V
100
µA
VOH
High Level Output Voltage
IOH = −400 µA
2.4
V
VOL
Low Level Output Voltage
IOL = 2.1 mA
0.4
V
IOL (
BY
/
RY
)
Output Current of
BY
/
RY
Pin
VOL = 0.4 V
8
mA


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