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TC55NEM216AFTN55 데이터시트(PDF) 3 Page - Toshiba Semiconductor |
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TC55NEM216AFTN55 데이터시트(HTML) 3 Page - Toshiba Semiconductor |
3 / 11 page TC55NEM216AFTN55,70 2002-07-04 3/11 OPERATING MODE MODE CE OE R/W LB UB I/O1~I/O8 I/O9~I/O16 POWER L L H L L Output Output IDDO L L H H L High-Z Output IDDO Read L L H L H Output High-Z IDDO L * L L L Input Input IDDO L * L H L High-Z Input IDDO Write L * L L H Input High-Z IDDO L H H L L High-Z High-Z IDDO L H H H L High-Z High-Z IDDO Output Deselect L H H L H High-Z High-Z IDDO H * * * * High-Z High-Z IDDS Standby * * * H H High-Z High-Z IDDS * = don't care H = logic high L = logic low MAXIMUM RATINGS SYMBOL RATING VALUE UNIT VDD Power Supply Voltage −0.3~7.0 V VIN Input Voltage −0.3*~7.0 V VI/O Input/Output Voltage −0.5~VDD + 0.5 V PD Power Dissipation 0.6 W Tsolder Soldering Temperature (10s) 260 °C Tstg Storage Temperature −55~150 °C Topr Operating Temperature −40~85 °C *: −2.0 V when measured at a pulse width of 20ns DC RECOMMENDED OPERATING CONDITIONS (Ta ==== −−−−40° to 85°C) SYMBOL PARAMETER MIN TYP MAX UNIT VDD Power Supply Voltage 4.5 5.0 5.5 V VIH Input High Voltage 2.2 VDD + 0.3 V VIL Input Low Voltage −0.3* 0.6 V VDH Data Retention Supply Voltage 2.0 5.5 V *: −2.0 V when measured at a pulse width of 20ns |
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