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TC55NEM216AFTN55 데이터시트(HTML) 3 Page - Toshiba Semiconductor

부품명 TC55NEM216AFTN55
상세내용  TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
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제조사  TOSHIBA [Toshiba Semiconductor]
홈페이지  http://www.semicon.toshiba.co.jp/eng
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TC55NEM216AFTN55 데이터시트(HTML) 3 Page - Toshiba Semiconductor

 
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TC55NEM216AFTN55,70
2002-07-04
3/11
OPERATING MODE
MODE
CE
OE
R/W
LB
UB
I/O1~I/O8
I/O9~I/O16
POWER
L
L
H
L
L
Output
Output
IDDO
L
L
H
H
L
High-Z
Output
IDDO
Read
L
L
H
L
H
Output
High-Z
IDDO
L
*
L
L
L
Input
Input
IDDO
L
*
L
H
L
High-Z
Input
IDDO
Write
L
*
L
L
H
Input
High-Z
IDDO
L
H
H
L
L
High-Z
High-Z
IDDO
L
H
H
H
L
High-Z
High-Z
IDDO
Output Deselect
L
H
H
L
H
High-Z
High-Z
IDDO
H
*
*
*
*
High-Z
High-Z
IDDS
Standby
*
*
*
H
H
High-Z
High-Z
IDDS
* = don't care
H = logic high
L = logic low
MAXIMUM RATINGS
SYMBOL
RATING
VALUE
UNIT
VDD
Power Supply Voltage
−0.3~7.0
V
VIN
Input Voltage
−0.3*~7.0
V
VI/O
Input/Output Voltage
−0.5~VDD + 0.5
V
PD
Power Dissipation
0.6
W
Tsolder
Soldering Temperature (10s)
260
°C
Tstg
Storage Temperature
−55~150
°C
Topr
Operating Temperature
−40~85
°C
*:
−2.0 V when measured at a pulse width of 20ns
DC RECOMMENDED OPERATING CONDITIONS (Ta
==== −−−−40° to 85°C)
SYMBOL
PARAMETER
MIN
TYP
MAX
UNIT
VDD
Power Supply Voltage
4.5
5.0
5.5
V
VIH
Input High Voltage
2.2
VDD + 0.3
V
VIL
Input Low Voltage
−0.3*
0.6
V
VDH
Data Retention Supply Voltage
2.0
5.5
V
*:
−2.0 V when measured at a pulse width of 20ns


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