TP0610KL datasheet(2/4 Pages) VISHAY

부품명	TP0610KL

상세설명	P-Channel 60-V (D-S) MOSFET

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TP0610KL/BS250KL

Vishay Siliconix

New Product

www.vishay.com

2

Document Number: 72712

S-40244—Rev. A, 16-Feb-04

SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = −10 µA

−60

V

Gate-Threshold Voltage

VGS(th)

VDS = VGS, ID = −250 µA

−1

−2.1

−3.0

V

VDS = 0 V, VGS = "20 V

"10

mA

Gate Body Leakage

IGSS

VDS = 0 V, VGS = "10 V

"200

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "10 V, TJ = 85_C

"500

nA

VDS = 0 V, VGS = "5 V

"100

Zero Gate Voltage Drain Current

IDSS

VDS = −60 V, VGS = 0 V

−1

mA

Zero Gate Voltage Drain Current

IDSS

VDS = −60 V, VGS = 0 V, TJ = 55_C

−10

mA

On State Drain Currenta

ID( )

VDS = −10 V, VGS = −4.5 V

−50

mA

On-State Drain Currenta

ID(on)

VDS = −10 V, VGS = −10 V

−600

mA

VGS = −4.5 V, ID = −25 mA

5.5

10

Drain-Source On-Resistancea

rDS(on)

VGS = −10 V, ID = −500 mA

3.1

6

W

DS(on)

VGS = −10 V, ID = −500 mA, TJ = 125_C

4.7

9

Forward Transconductancea

gfs

VDS = −10 V, ID = −100 mA

180

mS

Diode Forward Voltagea

VSD

IS = −200 mA, VGS = 0 V

−0.9

−1.4

V

Dynamicb

Total Gate Charge

Qg

1.7

3

Gate-Source Charge

Qgs

VDS = −30 V, VGS = −15 V, ID ^ −500 mA

0.26

nC

Gate-Drain Charge

Qgd

DS

GS

D

0.46

Gate Resistance

Rg

285

W

Turn On Time

td(on)

2.4

5

Turn-On Time

tr

VDD = −25 V, RL = 150 W

ID ^ −150 mA VGEN = −10 V

15.5

25

ns

Turn Off Time

td(off)

ID ^ −150 mA, VGEN = −10 V

Rg = 10 W

21

35

ns

Turn-Off Time

tf

Rg 10 W

12.5

20

Notes

a.

Pulse test: PW v300 ms duty cycle v2%.

b.

Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0

300

600

900

1200

02468

10

0.0

0.2

0.4

0.6

0.8

1.0

012345

Output Characteristics

Transfer Characteristics

VDS − Drain-to-Source Voltage (V)

VGS = 10 V

5 V

4 V

VGS − Gate-to-Source Voltage (V)

TJ = −55_C

125_C

25_C

6 V

7 V

8 V

For the following graphs, p-channel negative polarities for all voltage and current values are represented as positive values.

유사한 부품 번호 - TP0610KL

제조업체	부품명	데이터시트	상세설명
Vishay Siliconix	TP0610K	47Kb / 4P	P-Channel 60-V (D-S) MOSFET Rev. C, 16-Jul-01
	TP0610K	199Kb / 4P	P-Channel 60-V (D-S) MOSFET Rev. B, 02-Jan-06
	TP0610K	213Kb / 8P	P-Channel 60 V (D-S) MOSFET Rev. H, 05-Jul-10
	TP0610K	180Kb / 7P	P-Channel 60 V (D-S) MOSFET 01-Jan-2022
TECH PUBLIC Electronics...	TP0610K	2Mb / 5P	1.7Q ,60V P-Channel MOSFET

More results

유사한 설명 - TP0610KL

제조업체	부품명	데이터시트	상세설명
Vishay Siliconix	SI6459BDQ	78Kb / 5P	P-Channel 60-V (D-S) MOSFET Rev. A, 03-Nov-03
Bruckewell Technology L...	MSD30P06	544Kb / 5P	P-Channel 60-V (D-S) MOSFET
Analog Power	AM90P06-20B	367Kb / 5P	P-Channel 60-V (D-S) MOSFET
Analog Power	AM30P06-40D	350Kb / 5P	P-Channel 60-V (D-S) MOSFET
Vishay Siliconix	TP0610K	199Kb / 4P	P-Channel 60-V (D-S) MOSFET Rev. B, 02-Jan-06
	SI3459DV	62Kb / 4P	P-Channel 60-V (D-S) MOSFET Rev. B, 29-Nov-99
	SI6459DQ	60Kb / 4P	P-Channel 60-V (D-S) MOSFET Rev. D, 29-Nov-99
Analog Power	AM7461P	182Kb / 3P	P-Channel 60-V (D-S) MOSFET
Analog Power	AM7463P	357Kb / 5P	P-Channel 60-V (D-S) MOSFET
Vishay Siliconix	SI7461DP	202Kb / 4P	P-Channel 60-V (D-S) MOSFET Rev. B, 12-Dec-05
Analog Power	AM90P06-08P	345Kb / 5P	P-Channel 60-V (D-S) MOSFET

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TP0610KL 데이터시트(PDF) 2 Page - Vishay Siliconix

TP0610KL 데이터시트(HTML) 2 Page - Vishay Siliconix

유사한 부품 번호 - TP0610KL

유사한 설명 - TP0610KL

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