전자부품 데이터시트 검색엔진 |
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KFM1G16Q2M 데이터시트(PDF) 7 Page - Samsung semiconductor |
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KFM1G16Q2M 데이터시트(HTML) 7 Page - Samsung semiconductor |
7 / 124 page MuxOneNAND1G(KFM1G16Q2M-DEB5) FLASH MEMORY 7 MuxOneNAND2G(KFN2G16Q2M-DEB5) Device Architecture • Design Technology: • Supply Voltage: • Host Interface: • 5KB Internal BufferRAM: • SLC NAND Array: Device Performance • Host Interface Type: - Up to 54MHz clock frequency - Linear Burst 4-, 8-, 16, 32-words with wrap around - Continuous 1K word Sequential Burst • Programmable Burst Read Latency • Multiple Sector Read: • Multiple Reset Modes: • Multi Block Erase • Low Power Dissipation: - Standby current : 10uA - Synchronous Burst Read current(54MHz) : 12mA - Load current : 30mA - Program current : 25mA - Erase current : 20mA - Multi Block Erase current : 20mA • Reliable CMOS Floating-Gate Technology - Endurance : 100K Program/Erase Cycles - Data Retention : 10 Years System Hardware • Voltage detector generating internal reset signal from Vcc • Hardware reset input (/RP) • Data Protection Modes • User-controlled One Time Programmable(OTP) area • Internal 2bit EDC / 1bit ECC • Internal Bootloader supports Booting Solution in system • Handshaking Feature • Detailed chip information Packaging • 1G products • 2G DDP products 90nm 1.8V (1.7V ~ 1.95V) 16 bit 1KB BootRAM, 4KB DataRAM (2K+64)B Page Size, (128K+4K)B Block Size Synchronous Burst Read Asynchronous Random Read - 76ns access time Asynchronous Random Write Latency 3(up to 40MHz), 4, 5, 6, and 7 Up to 4 sectors using Sector Count Register Cold/Warm/Hot/NAND Flash Resets up to 64 Blocks Typical Power, - Write Protection for BootRAM - Write Protection for NAND Flash Array - Write Protection during power-up - Write Protection during power-down - INT pin indicates Ready / Busy - Polling the interrupt register status bit - by ID register 63ball, 10mm x 13mm x max 1.0mmt , 0.8mm ball pitch FBGA 63ball, 11mm x 13mm x max 1.2mmt , 0.8mm ball pitch FBGA (TBD) 1.5 Product Features |
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