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MB84VD23381FJ 데이터시트(HTML) 37 Page - Fujitsu Component Limited.

부품명 MB84VD23381FJ
상세내용  Stacked MCP (Multi-Chip Package) FLASH MEMORY & FCRAM
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제조사  FUJITSU [Fujitsu Component Limited.]
홈페이지  http://edevice.fujitsu.com/fmd/en/index.html
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MB84VD23381FJ 데이터시트(HTML) 37 Page - Fujitsu Component Limited.

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MB84VD23381FJ-80
36
• POWER DOWN PARAMETER (FCRAM)
• OTHER TIMING PARAMETER (FCRAM)
*1: It may write some data into any address location if tCHWX is not satisfied.
*2: Must satisfy tCHH(Min) after tC2LH(Min).
*3: Requires Power Down mode entry and exit after tC2HL.
*4: The Input Transition Time (tT) at AC testing is 5 ns as shown in below. If actual tT is longer than 5 ns,
it may violate some timing parameters of AC specification.
•••• AC TEST CONDITIONS (FCRAM)
Parameter
Symbol
Value
Unit
Note
Min
Max
CE2r Low Setup Time for Power Down Entry
tCSP
10
ns
CE2r Low Hold Time after Power Down Entry
tC2LP
100
ns
CE1r High Hold Time following CE2r High after
Power Down Exit
tCHH
350
µs
CE1r High Setup Time following CE2r High after
Power Down Exit
tCHS
10
ns
Parameter
Symbol
Value
Unit
Note
Min
Max
CE1r High to OE Invalid Time for Standby Entry
tCHOX
20
ns
CE1r High to WE Invalid Time for Standby Entry
tCHWX
20
ns
*1
CE2r Low Hold Time after Power-up
tC2LH
50
µs*2
CE2r HIgh Hold Time after Power-up
tC2HL
50
µs*3
CE1r High Hold Time following CE2r High after
Power-up
tCHH
350
µs*2
Input Transition Time
tT
125
ns
*4
Parameter
Symbol
Condition
Value
Unit
Note
Input High Level
VIH
VCCr
= 2.7 V to 3.1 V
2.3
V
Input Low Level
VIL
VCCr
= 2.7 V to 3.1 V
0.4
V
Input Timing Measurement Level
VREF
VCCr
= 2.7 V to 3.1 V
1.3
V
Input Transition Time
tT
Between VIL and VIH
5ns


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