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MB84VD23381FJ ๋ฐ์ดํ„ฐ์‹œํŠธ(HTML) 48 Page - Fujitsu Component Limited.

๋ถ€ํ’ˆ๋ช… MB84VD23381FJ
์ƒ์„ธ๋‚ด์šฉ  Stacked MCP (Multi-Chip Package) FLASH MEMORY & FCRAM
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MB84VD23381FJ ๋ฐ์ดํ„ฐ์‹œํŠธ(HTML) 48 Page - Fujitsu Component Limited.

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MB84VD23381FJ-80
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โ€ขโ€ขโ€ขโ€ข Standby Entry Timing after Read or Write (FCRAM)
Note : Both tCHOX and tCHWX define the earliest entry timing for Standby mode. If either of timing is not satisfied, it
takes tRC (Min) period from either last address transition of A0 and A1, or CE1r Low to High transition.
tCHOX
CE1r
OE
WE
Active (Read)
Standby
Active (Write)
Standby
tCHWX


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