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MB84VD23381FJ 데이터시트(HTML) 50 Page - Fujitsu Component Limited.

부품명 MB84VD23381FJ
상세내용  Stacked MCP (Multi-Chip Package) FLASH MEMORY & FCRAM
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제조사  FUJITSU [Fujitsu Component Limited.]
홈페이지  http://edevice.fujitsu.com/fmd/en/index.html
Logo FUJITSU - Fujitsu Component Limited.

MB84VD23381FJ 데이터시트(HTML) 50 Page - Fujitsu Component Limited.

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MB84VD23381FJ-80
49
s
s
s
s ERASE AND PROGRAMMING PERFORMANCE (Flash)
Note : Typical Erase conditions TA =
+25°C, VCCf_1 & VCCf_2 = 2.9V
Typical Program conditions TA =
+25°C, VCCf_1 & VCCf_2 = 2.9V
Data= Checker
s
s
s
s PIN CAPACITANCE
Note : Test conditions TA
= +25 °C, f = 1.0 MHz
s
s
s
s HANDLING OF PACKAGE
Please handle this package carefully since the sides of package create acute angles.
s
s
s
s CAUTION
• The high voltage (VID) cannot apply to address pins and control pins except RESET. Exception is when
autoselect and sector group protect function are used, then the high voltage (VID) can be applied to RESET.
• Without the high voltage (VID) , sector group protection can be achieved by using “Extended Sector Group
Protection” command.
Parameter
Value
Unit
Remarks
Min
Typ
Max
Sector Erase Time
0.5
2
s
Excludes programming time
prior to erasure
Word Programming Time
6
100
µs
Excludes system-level
overhead
Chip Programming Time
25.2
95
s
Excludes system-level
overhead
Erase/Program Cycle
100,000
cycle
Parameter
Symbol
Test Setup
Value
Unit
Typ
Max
Input Capacitance
CIN
VIN = 0
11
14
pF
Output Capacitance
COUT
VOUT = 0
12
16
pF
Control Pin Capacitance
CIN2
VIN = 0
14
16
pF
WP/ACC Pin Capacitance
CIN3
VIN = 0
21.5
26
pF


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