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MB84VD23381FJ 데이터시트(HTML) 7 Page - Fujitsu Component Limited.

부품명 MB84VD23381FJ
상세내용  Stacked MCP (Multi-Chip Package) FLASH MEMORY & FCRAM
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제조사  FUJITSU [Fujitsu Component Limited.]
홈페이지  http://edevice.fujitsu.com/fmd/en/index.html
Logo FUJITSU - Fujitsu Component Limited.

MB84VD23381FJ 데이터시트(HTML) 7 Page - Fujitsu Component Limited.

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MB84VD23381FJ-80
6
s
s
s
s DEVICE BUS OPERATIONS
User Bus Operations
Legend : L
= VIL, H = VIH, X = VIL or VIH. See DC Characteristics for voltage levels.
*1: Other operations except for this indicated table are prohibited.
*2: Do not apply CEf
= VIL, CE1r = VIL and CE2r = VIH all at once.
*3: FCRAM Output Disable condition should not be kept longer than 1
µs.
*4: WE can be VIL if OE is VIL, OE at VIH initiates the write operations.
*5: FCRAM Byte control at Read operation is not supported.
*6: It is also used for the extended sector group protections.
*7: Protect “outermost” 2
× 8 Kbytes (4 words) on both ends of the boot block sectors.
*8: Power Down mode can be entered from Standby state and all DQ pins are in High-Z state.
Operation *1, *2
CEfCE1rCE2r
OE
WE
LB
UB DQ7 to DQ0 DQ15 to DQ8 RESET WP/ACC*7
Full Standby
H
H
H
X
X
X
X
High-Z
High-Z
H
X
Output Disable *3
H
L
X
H
H
X
X
High-Z
High-Z
HX
L
H
X
H
H
X
X
High-Z
High-Z
Read from Flash *4
LH
X
L
H
X
X
DOUT
DOUT
HX
Write to Flash
L
H
X
H
L
X
X
DIN
DIN
HX
Read from FCRAM *5
HL
H
L
H
X
X
DOUT
DOUT
HX
Write to FCRAM
H
L
H
H
L
LL
DIN
DIN
HX
HL
High-Z
DIN
LH
DIN
High-Z
Temporary Sector
Group
Unprotection *6
XX
X
X
X
X
X
X
X
VID
X
Flash Hardware
Reset
X
H
H
X
X
X
X
High-Z
High-Z
L
X
Boot Block Sector
Write Protection
XX
X
X
X
X
X
X
X
X
L
FCRAM Power Down*8
XX
L
X
X
X
X
X
X
X
X


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