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MB84VD23381FJ 데이터시트(HTML) 9 Page - Fujitsu Component Limited.

부품명 MB84VD23381FJ
상세내용  Stacked MCP (Multi-Chip Package) FLASH MEMORY & FCRAM
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제조사  FUJITSU [Fujitsu Component Limited.]
홈페이지  http://edevice.fujitsu.com/fmd/en/index.html
Logo FUJITSU - Fujitsu Component Limited.

MB84VD23381FJ 데이터시트(HTML) 9 Page - Fujitsu Component Limited.

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MB84VD23381FJ-80
8
s
s
s
s ELECTRICAL CHARACTERISTICS
1.
DC Characteristics*1,*2,*3
(Continued)
Parameter
Symbol
Test Conditions
Value
Unit
Min
Typ
Max
Input Leakage Current
ILI
VIN = VSS to VCCf, VCCr
–1.0
+1.0
µA
Output Leakage Current
ILO
VOUT = VSS to VCCf, VCCr
–1.0
+1.0
µA
RESET Inputs Leakage
Current
ILIT
VCCf = VCCf Max,
RESET = 12.5 V
35
µA
Flash VCC Active Current
(Read) *4
ICC1fCEf = VIL, OE = VIH
tCYCLE = 5 MHz
18
mA
tCYCLE = 1 MHz
4
mA
Flash VCC Active Current
(Program/Erase) *5
ICC2fCEf = VIL, OE = VIH
——
35
mA
Flash VCC Active Current
(Read-While-Program) *6
ICC3fCEf = VIL, OE = VIH
——
53
mA
Flash VCC Active Current
(Read-While-Erase) *8
ICC4fCEf = VIL, OE = VIH
——
53
mA
Flash VCC Active Current
(Erase-Suspend-Program)*8
ICC5fCEf = VIL, OE = VIH
——
40
mA
WP/ACC Acceleration
Program Current
IACC
VCCf = VCCf Max,
WP/ACC = VACC Max
——
20
mA
FCRAM VCC Active Current
ICC1r
VCCr = VCCr Max,
CE1r = VIL, CE2r = VIH,
VIN = VIH or VIL,
IOUT = 0 mA
tRC / tWC = Min
15
20
mA
tRC / tWC = 1
µs—
2.5
3.0
Flash VCC Standby Current
ISB1f
VCCf = VCCf Max, CEf = VCCf ± 0.3 V,
RESET = VCCf ± 0.3 V,
WP/ACC = VCCf ± 0.3 V
—1
5
µA
Flash VCC Standby Current
(RESET)
ISB2f
VCCf = VCCf Max, RESET = VSS ± 0.3 V,
WP/ACC = VCCf ± 0.3 V
—1
5
µA
Flash VCC Curren
t (Automatic Sleep Mode) *6
ISB3f
VCCf = VCCf Max, CEf = VSS ± 0.3 V,
RESET = VCCf ± 0.3 V,
WP/ACC = VCCf ± 0.3 V,
VIN = VCCf ± 0.3 V or VSS ± 0.3 V
—1
5
µA
FCRAM VCC Standby Current
ISBr
VCCr = VCCr Max, CE1r = CE2r = VIH,
VIN = VIH or VIL, IOUT = 0 mA
—0.5
1
mA
FCRAM VCC Standby Current
ISB1r
VCCr = VCCr Max, CE1r > VCCr – 0.2V,
CE2r > VCCr– 0.2V,
VIN < 0.2 V or VIN> VCCr – 0.2 V,
IOUT = 0 mA
——
70
µA
FCRAM VCC Standby
Current *9
ISB2r
VCCr = VCCr Max,CE1r > VCCr – 0.2V,
CE2r > VCCr– 0.2V,
VIN Cycle time = tRC Min, IOUT = 0 mA
——
5
mA
FCRAM VCC Power Down
Current
IPDr
VCCr = VCCr Max,
VIN > VCCf – 0.2 V or VIN < 0.2 V,
CE2r < 0.2V, IOUT = 0 mA
——
10
µA


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