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MB84VD23381FJ 데이터시트(HTML) 10 Page - Fujitsu Component Limited.

부품명 MB84VD23381FJ
상세내용  Stacked MCP (Multi-Chip Package) FLASH MEMORY & FCRAM
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제조사  FUJITSU [Fujitsu Component Limited.]
홈페이지  http://edevice.fujitsu.com/fmd/en/index.html
Logo FUJITSU - Fujitsu Component Limited.

MB84VD23381FJ 데이터시트(HTML) 10 Page - Fujitsu Component Limited.

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MB84VD23381FJ-80
9
(Continued)
*1 : All voltage are referenced to VSS.
*2 : FCRAM DC characteristics are measured after following POWER-UP timing.
*3 : IOUT depends on the output load conditions.
*4 : The ICC current listed includes both the DC operating current and the frequency dependent component.
*5 : ICC active while Embedded Algorithm (program or erase) is in progress.
*6 : Automatic sleep mode enables the low power mode when address remain stable for 150 ns.
*7 : Applicable for only VCC applying.
*8 : Embedded Algorithm (program or erase) is in progress. (@5 MHz)
*9 : ISB2r depends on VIN cycle time. Please refer to s APPENDIX A.
Parameter
Symbol
Test Conditions
Value
Unit
Min
Typ
Max
Input Low Level
VIL
–0.3
0.5
V
Input High Level
VIH
Flash
2.0
VCCf+0.3
V
FCRAM
2.2
VCCr+0.3
Voltage for Autoselect and
Sector Protection (RESET) *7
VID
11.5
12.5
V
Voltage for WP/ACC Sector
Protection/Unprotection and
Program Acceleration
VACC
—8.5
9.0
9.5
V
FCRAM Output Low Level
VOL
VCCr = VCCr Min, IOL =1.0 mA
0.4
V
FCRAM Output High Level
VOH
VCCr = VCCr Min, IOH = –0.5 mA
2.2
V
Flash Output Low Level
VOL
VCCf = VCCf Min, IOL = 4.0 mA
0.45
V
Flash Output High Level
VOH
VCCf = VCCf Min, IOH = –0.1 mA
VCCf–0.4
V
Flash Low VCC Lock-Out
Voltage
VLKO
—2.3
2.4
2.5
V


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