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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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MB84VD23381FJ 데이터시트(HTML) 2 Page - Fujitsu Component Limited. |
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MB84VD23381FJ 데이터시트(HTML) 2 Page - Fujitsu Component Limited. |
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DS05-50304-3E FUJITSU SEMICONDUCTOR DATA SHEET Stacked MCP (Multi-Chip Package) FLASH MEMORY & FCRAM CMOS 64 M ( ×××× 16) FLASH MEMORY & 16 M ( ×××× 16) Mobile FCRAMTM MB84VD23381FJ-80 s s s s FEATURES • Power Supply Voltage of 2.7 V to 3.1 V • High Performance 70 ns maximum access time (Flash) 80 ns maximum access time (FCRAM) • Operating Temperature −30 °C to +85 °C • Package 65-ball FBGA (Continued) s s s s PRODUCT LINEUP *: Both VCCf and VCCr must be the same level when either part is being accessed. s s s s PACKAGE Flash Memory FCRAM Power Supply Voltage ( V ) VCCf* = 2.7 V to 3.1 V VCCr* = 2.7 V to 3.1 V Max Address Access Time (ns) 70 80 Max CE Access Time (ns) 70 80 Max OE Access Time (ns) 30 40 65-ball plastic FBGA (BGA-65P-M01) |
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