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IKP20N60T 데이터시트(PDF) 3 Page - Infineon Technologies AG |
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IKP20N60T 데이터시트(HTML) 3 Page - Infineon Technologies AG |
3 / 15 page IKP20N60T, IKB20N60T TrenchStop Series IKW20N60T Power Semiconductors 3 Rev. 2.2 Dec-04 Dynamic Characteristic Input capacitance Ciss - 1100 - Output capacitance Coss - 71 - Reverse transfer capacitance Crss VCE=25V, VGE=0V, f=1MHz - 32 - pF Gate charge QGate VCC=480V, IC=20A VGE=15V - 120 - nC Internal emitter inductance measured 5mm (0.197 in.) from case LE TO-220-3-1 TO-247-3-1 TO-263-3-2 - 7 - nH Short circuit collector current 1) IC(SC) VGE=15V,tSC ≤5µs VCC = 400V, Tj ≤ 150°C - 183.3 - A Switching Characteristic, Inductive Load, at Tj=25 °C Value Parameter Symbol Conditions min. Typ. max. Unit IGBT Characteristic Turn-on delay time td(on) - 18 - Rise time tr - 14 - Turn-off delay time td(off) - 199 - Fall time tf - 42 - ns Turn-on energy Eon - 0.31 - Turn-off energy Eoff - 0.46 - Total switching energy Ets Tj=25 °C, VCC=400V,IC=20A, VGE=0/15V, RG=12 Ω, Lσ 2) =131nH, Cσ 2) =31pF Energy losses include “tail” and diode reverse recovery. - 0.77 - mJ Anti-Parallel Diode Characteristic Diode reverse recovery time trr - 41 - ns Diode reverse recovery charge Qrr - 0.31 - µC Diode peak reverse recovery current Irrm - 13.3 - A Diode peak rate of fall of reverse recovery current during tb dirr/dt Tj=25 °C, VR=400V, IF=20A, diF/dt=880A/ µs - 711 - A/ µs 1) Allowed number of short circuits: <1000; time between short circuits: >1s. 2) Leakage inductance Lσ and Stray capacity Cσ due to dynamic test circuit in Figure E. |
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