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2N4410 데이터시트(PDF) 2 Page - ON Semiconductor |
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2N4410 데이터시트(HTML) 2 Page - ON Semiconductor |
2 / 8 page 2N4410 http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) hFE 60 60 — 400 — Collector–Emitter Saturation Voltage (IC = 1.0 mAdc, IB = 0.1 mAdc) VCE(sat) — 0.2 Vdc Base–Emitter Saturation Voltage (IC = 1.0 mAdc, IB = 0.1 mAdc) VBE(sat) — 0.8 Vdc Base–Emitter On Voltage (IC = 1.0 mAdc, VCE = 5.0 Vdc) VBE(on) — 0.8 Vdc SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product(2) (IC = 10 mAdc, VCE = 10 Vdc, f = 20 MHz) fT 60 300 MHz Collector–Base Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz, emitter guarded) Ccb — 12 pF Emitter–Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz, collector guarded) Ceb — 50 pF 2. fT = |hfe| • ftest. |
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