2PB709AW datasheet(3/8 Pages) PHILIPS

부품명	2PB709AW

상세설명	PNP general purpose transistor

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제조업체	PHILIPS [NXP Semiconductors]

홈페이지	http://www.nxp.com

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3 / 8 page

2002 Jun 26

3

Philips Semiconductors

Product speciﬁcation

PNP general purpose transistor

2PB709AW

THERMAL CHARACTERISTICS

Note

1. For mounting conditions, see

“Thermal considerations and footprint design for SOT323 in the General Part of Data

Handbook SC18”.

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

Note

1. Pulse test: tp ≤ 300 µs; δ≤ 0.02.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

625

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector-base cut-off current

IE = 0; VCB = −45 V

−−10

nA

IE = 0; VCB = −45 V; Tj = 150 °C

−−5

µA

IEBO

emitter-base cut-off current

IC = 0; VEB = −5V

−−10

nA

hFE

DC current gain

IC = −2 mA; VCE = −10 V

2PB709AQW

160

260

2PB709ARW

210

340

2PB709ASW

290

460

VCEsat

collector-emitter saturation voltage

IC = −100 mA; IB = −10 mA;

note 1

−−500

mV

Cc

collector capacitance

IE =ie = 0; VCB = −10 V;

f = 1 MHz

−

5pF

fT

transition frequency

IC = −1 mA; VCE = −10 V;

f = 100 MHz

2PB709AQW

60

−

MHz

2PB709ARW

70

−

MHz

2PB709ASW

80

−

MHz

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2PB709AW 데이터시트(PDF) 3 Page - NXP Semiconductors

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