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MRF5S21090HR3 데이터시트(PDF) 1 Page - Freescale Semiconductor, Inc |
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MRF5S21090HR3 데이터시트(HTML) 1 Page - Freescale Semiconductor, Inc |
1 / 12 page MRF5S21090HR3 MRF5S21090HSR3 1 RF Device Data Freescale Semiconductor RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica- tions. To be used in Class AB fo r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. • Typical 2-carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 850 mA, Pout = 19 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 14.5 dB Drain Efficiency — 26% IM3 @ 10 MHz Offset — - 37.5 dBc @ 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset — - 40.5 dBc @ 3.84 MHz Channel Bandwidth • Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 90 Watts CW Output Power • Characterized with Series Equivalent Large-Signal Impedance Parameters • Internally Matched, Controlled Q, for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • Lower Thermal Resistance Package • Low Gold Plating Thickness on Leads, 40µ″ Nominal. • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. Table 1. Maximum Ratings Rating Symbol Value Unit Drain - Source Voltage VDSS - 0.5, +65 Vdc Gate - Source Voltage VGS - 0.5, +15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25 °C PD 269 1.5 W W/ °C Storage Temperature Range Tstg - 65 to +150 °C Operating Junction Temperature TJ 200 °C Table 2. Thermal Characteristics Characteristic Symbol Value (1,2) Unit Thermal Resistance, Junction to Case Case Temperature 80 °C, 90 W CW Case Temperature 76 °C, 19 W CW RθJC 0.65 0.69 °C/W 1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. MRF5S21090H Rev. 1, 12/2004 Freescale Semiconductor Technical Data MRF5S21090HR3 MRF5S21090HSR3 2170 MHz, 19 W AVG., 28 V 2 x W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1 NI - 780 MRF5S21090HR3 CASE 465A - 06, STYLE 1 NI - 780S MRF5S21090HSR3 Freescale Semiconductor, Inc., 2004. All rights reserved. |
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