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IKP10N60T 데이터시트(PDF) 4 Page - Infineon Technologies AG |
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IKP10N60T 데이터시트(HTML) 4 Page - Infineon Technologies AG |
4 / 14 page IKP10N60T TrenchStop Series IKB10N60T Power Semiconductors 4 Rev. 2 Oct-04 Switching Characteristic, Inductive Load, at Tj=175 °C Value Parameter Symbol Conditions min. typ. max. Unit IGBT Characteristic Turn-on delay time t d(on) - 10 - Rise time t r - 11 - Turn-off delay time t d (off) - 233 - Fall time t f - 63 - ns Turn-on energy E on - 0.26 - Turn-off energy E off - 0.35 - Total switching energy E ts T j=175 °C, V CC=400V, IC= 10A, V GE=0/15V , R G = 23 Ω L σ 1) =60nH, C σ 1) =40pF Energy losses include “tail” and diode reverse recovery. - 0.61 - mJ Anti-Parallel Diode Characteristic Diode reverse recovery time t rr - 200 - ns Diode reverse recovery charge Q rr - 0.92 - µC Diode peak reverse recovery current I rr m - 13 - A Diode peak rate of fall of reverse recovery current during tb di rr/dt T j=175 °C V R =400V, IF =10A , di F /dt =880A/ µs - 390 - A/ µs 1) Leakage inductance Lσ and Stray capacity Cσ due to dynamic test circuit in Figure E. |
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