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IRFP4242PBF 데이터시트(PDF) 1 Page - International Rectifier |
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IRFP4242PBF 데이터시트(HTML) 1 Page - International Rectifier |
1 / 8 page www.irf.com 1 7/25/05 IRFP4242PbF Notes through
are on page 8 Description This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications. Features l Advanced process technology l Key parameters optimized for PDP Sustain & Energy Recovery applications l Low EPULSE rating to reduce the power dissipation in Sustain & ER applications l Low QG for fast response l High repetitive peak current capability for reliable operation l Short fall & rise times for fast switching l 175°C operating junction temperature for improved ruggedness l Repetitive avalanche capability for robustness and reliability S D G PDP MOSFET VDS min 300 V VDS (Avalanche) typ. 360 V RDS(ON) typ. @ 10V 49 m : IRP max @ TC= 100°C 93 A TJ max 175 °C Key Parameters Absolute Maximum Ratings Parameter Units VGS Gate-to-Source Voltage V ID @ TC = 25°C Continuous Drain Current, VGS @ 10V A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current c IRP @ TC = 100°C Repetitive Peak Current g PD @TC = 25°C Power Dissipation W PD @TC = 100°C Power Dissipation Linear Derating Factor W/°C TJ Operating Junction and °C TSTG Storage Temperature Range Soldering Temperature for 10 seconds Mounting Torque, 6-32 or M3 Screw N Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case f ––– 0.35 °C/W Max. 33 190 46 ±30 93 300 -40 to + 175 10lb xin (1.1Nxm) 430 210 2.9 PD - 96966A GD S Ga te D ra in S o u rce TO-247AC S D G D |
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