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AA1F4Z 데이터시트(HTML) 1 Page - NEC

부품명 AA1F4Z
상세내용  On-chip resistor NPN silicon epitaxial transistor For mid-speed switching
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제조사  NEC [NEC]
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AA1F4Z 데이터시트(HTML) 1 Page - NEC

   
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1998
©
Document No. D16161EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
COMPOUND TRANSISTOR
AA1F4Z
on-chip resistor NPN silicon epitaxial transistor
For mid-speed switching
DATA SHEET
2002
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
FEATURES
On-chip bias resistor
(R1 = 22 k
Ω)
Complementary transistor with AN1F4Z
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°°°°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
60
V
Collector to emitter voltage
VCEO
50
V
Emitter to base voltage
VEBO
5V
Collector current (DC)
IC(DC)
100
mA
Collector current (Pulse)
IC(pulse) *
200
mA
Total power dissipation
PT
250
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
*PW
≤ 10 ms, duty cycle ≤ 50 %
PACKAGE DRAWING (UNIT: mm)
ELECTRICAL CHARACTERISTICS (Ta = 25
°°°°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
ICBO
VCB = 50 V, IE = 0
100
nA
DC current gain
hFE1 **
VCE = 5.0 V, IC = 5.0 mA
135
330
600
DC current gain
hFE2 **
VCE = 5.0 V, IC = 50 mA
100
290
Collector saturation voltage
VCE(sat) **
IC = 5.0 mA, IB = 0.25 mA
0.04
0.2
V
Low level input voltage
VIL **
VCE = 5.0 V, IC = 100
µA
0.55
0.5
V
High level input voltage
VIH **
VCE = 0.2 V, IC = 5.0 mA
3.0
1.05
V
Input resistance
R1
15.4
22
28.6
k
Turn-on time
ton
0.2
µs
Storage time
tstg
5.0
µs
Turn-off time
toff
VCC = 5.0 V, RL = 1.0 k
VI = 5.0 V, PW = 2.0
µs
duty cycle
≤2 %
6.0
µs
** Pulse test PW
≤ 350
µs, duty cycle ≤ 2 %
hFE CLASSIFICATION
Marking
Q
P
K
hFE1
135 to 270
200 to 400
300 to 600


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