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BA1L3M 데이터시트(PDF) 1 Page - NEC |
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1 / 4 page 1998 © Document No. D16175EJ1V0DS00 (1st edition) Date Published April 2002 N CP(K) Printed in Japan COMPOUND TRANSISTOR %$/0 RQFKLSUHVLVWRU131VLOLFRQHSLWD[LDOWUDQVLVWRU )RUPLGVSHHGVZLWFKLQJ '$7$ 6+((7 2002 The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. FEATURES • On-chip bias resistor (R = 4.7 k Ω, R = 4.7 kΩ) • Complementary transistor with BN1L3M ABSOLUTE MAXIMUM RATINGS (Ta = 25 °°°°C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 10 V Collector current (DC) IC(DC) 100 mA Collector current (Pulse) IC(pulse) * 200 mA Total power dissipation PT 250 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C *PW ≤ 10 ms, duty cycle ≤ 50 % PACKAGE DRAWING (UNIT: mm) ELECTRICAL CHARACTERISTICS (Ta = 25 °°°°C) Parameter Symbol Conditions MIN. TYP. MAX. Unit Collector cutoff current ICBO VCB = 50 V, IE = 0 100 nA DC current gain hFE1 ** VCE = 5.0 V, IC = 5.0 mA 20 40 80 − DC current gain hFE2 ** VCE = 5.0 V, IC = 50 mA 70 140 − Collector saturation voltage VCE(sat) ** IC = 5.0 mA, IB = 0.25 mA 0.08 0.3 V Low level input voltage VIL ** VCE = 5.0 V, IC = 100 µA 1.1 0.2 V High level input voltage VIH ** VCE = 0.2 V, IC = 5.0 mA 3.0 1.5 V Input resistance R1 3.29 4.7 6.11 k Ω Resistance ratio R1/R2 0.9 1.0 1.1 − Turn-on time ton 0.5 µs Storage time tstg 3.0 µs Turn-off time toff VCC = 5 V, RL = 1 k Ω VI = 5 V, PW = 2 µs duty cycle ≤2 % 5.0 µs ** PW ≤ 350 µs, duty cycle ≤ 2 % |
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