2SK3322-ZK datasheet(2/8 Pages) NEC

부품명	2SK3322-ZK

상세설명	SWITCHING N-CHANNEL POWER MOSFET

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제조업체	NEC [NEC]

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Data Sheet D14114EJ2V0DS

2

2SK3322

ELECTRICAL CHARACTERISTICS (TA = 25°C)

CHARACTERISTICS

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Zero Gate Voltage Drain Current

IDSS

VDS = 600 V, VGS = 0 V

100

µA

Gate Leakage Current

IGSS

VGS = ±30 V, VDS = 0 V

±10

µA

Gate Cut-off Voltage

VGS(off)

VDS = 10 V, ID = 1 mA

2.5

3.5

V

Forward Transfer Admittance

Note

| yfs |

VDS = 10 V, ID = 2.8 A

1.0

S

Drain to Source On-state Resistance

Note

RDS(on)

VGS = 10 V, ID = 2.8 A

1.7

2.2

Ω

Input Capacitance

Ciss

VDS = 10 V,

550

pF

Output Capacitance

Coss

VGS = 0 V,

115

pF

Reverse Transfer Capacitance

Crss

f = 1 MHz

13

pF

Turn-on Delay Time

td(on)

VDD = 150 V, ID = 2.8 A,

12

Ns

Rise Time

tr

VGS = 10 V,

10

ns

Turn-off Delay Time

td(off)

RG = 10

Ω

35

ns

Fall Time

tf

12

ns

Total Gate Charge

QG

VDD = 450 V,

15

nC

Gate to Source Charge

QGS

VGS = 10 V,

4

nC

Gate to Drain Charge

QGD

ID = 5.5 A

4.4

nC

Body Diode Forward Voltage

Note

VF(S-D)

IF = 5.5 A, VGS = 0 V

1.0

V

Reverse Recovery Time

trr

IF = 5.5 A, VGS = 0 V,

1.6

µs

Reverse Recovery Charge

Qrr

di/dt = 50 A/

µs

5.3

µC

Note Pulsed

TEST CIRCUIT 1 AVALANCHE CAPABILITY

RG = 25

Ω

50

Ω

PG.

L

VDD

VGS = 20

→ 0 V

BVDSS

IAS

ID

VDS

Starting Tch

VDD

D.U.T.

TEST CIRCUIT 3 GATE CHARGE

TEST CIRCUIT 2 SWITCHING TIME

PG.

RG

0

VGS

D.U.T.

RL

VDD

τ = 1 s

µ

Duty Cycle

≤ 1%

VGS

Wave Form

ID

Wave Form

VGS

10%

90%

VGS

10%

0

ID

90%

td(on)

tr

td(off)

tf

10%

τ

ID

0

ton

toff

PG.

50

Ω

D.U.T.

RL

VDD

IG = 2 mA

★

유사한 부품 번호 - 2SK3322-ZK

제조업체	부품명	데이터시트	상세설명
Inchange Semiconductor ...	2SK3322-ZK	400Kb / 2P	isc N-Channel MOSFET Transistor
Renesas Technology Corp	2SK3322-ZK	250Kb / 10P	MOS FIELD EFFECT TRANSISTOR 2000

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2SK3322-ZK 데이터시트(PDF) 2 Page - NEC

2SK3322-ZK 데이터시트(HTML) 2 Page - NEC

유사한 부품 번호 - 2SK3322-ZK

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