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STD2NB60 데이터시트(PDF) 3 Page - STMicroelectronics |
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STD2NB60 데이터시트(HTML) 3 Page - STMicroelectronics |
3 / 11 page 3/11 STD2NB60/STD2NB60-1 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise specified) Table 6. Off Table 7. On (1) Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Table 8. Dynamic Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Table 9. Switching On Table 10. Switching Off Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 250 µA VGS = 0 600 V IDSS Zero Gate Voltage VDS = Max Rating 1 µA Drain Current (VGS = 0) VDS = Max Rating Tc = 125 °C 50 µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 30 V ± 100 nA Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS(th) Gate Threshold Voltage VDS = VGS; ID = 250 µA3 4 5 V RDS(on) Static Drain-source On Resistance VGS = 10V; ID = 1.6 A 3.3 3.6 Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (1) Forward Transconductance VDS > ID(on) x RDS(on)max; ID = 1.6 A 1.2 2 S Ciss Input Capacitance VDS = 25 V; f = 1 MHz; VGS = 0 400 520 pF Coss Output Capacitance 57 77 pF Crss Reverse Transfer Capacitance 79 pF Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) Turn-on Time VDD = 300 V; ID = 1.6 A; RG = 4.7 Ω 11 17 ns tr Rise Time VGS = 10 V (see test circuit, Figure 16) 7 11 ns Qg Total Gate Charge VDD = 480 V; ID = 3.3 A; VGS = 10 V 15 22 nC Qgs Gate-Source Charge 6.2 nC Qgd Gate-Drain Charge 5.6 nC Symbol Parameter Test Conditions Min. Typ. Max. Unit tr(Voff) Off-voltage Rise Time VDD = 480 V; ID = 3.3 A; RG = 4.7 Ω 11 16 ns tf Fall Time VGS = 10 V (see test circuit, Figure 18) 13 18 ns tc Cross-over Time 18 25 ns |
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