SEMIX105GD12T4 datasheet(2/4 Pages) SEMIKRON

부품명	SEMIX105GD12T4

상세설명	Trench IGBT Modules

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SEMiX105GD12T4

2

Rev. 0.2 – 10.03.2017

SEMiX® 5

GD

Trench IGBT Modules

Evaluation Sample

SEMiX105GD12T4

Target Data

Features

• Solderless assembling solution with

PressFIT signal pins and screw power

terminals

• IGBT 4 Trench Gate Technology

•VCE(sat) with positive temperature

coefficient

• Low inductance case

• Reliable mechanical design with

injection moulded terminals and

reliable internal connections

• UL recognized file no. E63532

• NTC temperature sensor inside

Typical Applications*

•AC inverter drives

•UPS

• Electronic Welding

Remarks

• Product reliability results are valid for

Tjop=150 °C

• Dynamic data are estimated

• For storage and case temperature with

TIM see document “TP(HALA P8)

SEMiX 5p”

Characteristics

Symbol Conditions

min.

typ.

max.

Unit

Inverse diode

VF = VEC IF = 100 A

VGE =0 V

chiplevel

Tj =25 °C

2.20

2.52

V

Tj =150 °C

2.15

2.47

V

VF0

chiplevel

Tj =25 °C

1.30

1.50

V

Tj =150 °C

0.90

1.10

V

rF

chiplevel

Tj =25 °C

9.0

10

mΩ

Tj =150 °C

13

14

mΩ

IRRM

IF = 100 A

di/dtoff =2300 A/µs

VGE =-15 V

VCC = 600 V

Tj =150 °C

-A

Qrr

Tj =150 °C

-µC

Err

Tj =150 °C

12

mJ

Rth(j-c)

per diode

0.43

K/W

Rth(c-s)

per diode (λgrease=0.81 W/mK,

thickness 50-100µm)

t.b.d.

K/W

Rth(c-s)

per diode (λ=3.4 W/mK)

t.b.d.

K/W

Module

LCE

20

nH

RCC'+EE'

measured per

switch

TC =25°C

1.2

mΩ

TC =125 °C

1.65

mΩ

Rth(c-s)1

calculated without thermal coupling

t.b.d.

K/W

Rth(c-s)2

including thermal coupling,

Ts underneath module (λgrease=0.81 W/

(m*K))

t.b.d.

K/W

Rth(c-s)2

including thermal coupling,

Ts underneath module, pre-applied

phase change material

t.b.d.

K/W

Ms

to heat sink (M5)

3

6

Nm

Mt

to terminals (M6)

36

Nm

w398

g

Temperature Sensor

R100

Tc=100°C (R25=5 kΩ)

493 ± 5%

Ω

B100/125

R(T)=R100exp[B100/125(1/T-1/T100)]; T[K];

3550

±2%

K

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