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IRFP2410 데이터시트(PDF) 2 Page - International Rectifier

부품명 IRFP2410
상세설명  Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon
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제조업체  IRF [International Rectifier]
홈페이지  http://www.irf.com
Logo IRF - International Rectifier

IRFP2410 데이터시트(HTML) 2 Page - International Rectifier

  IRFP2410 Datasheet HTML 1Page - International Rectifier IRFP2410 Datasheet HTML 2Page - International Rectifier IRFP2410 Datasheet HTML 3Page - International Rectifier IRFP2410 Datasheet HTML 4Page - International Rectifier IRFP2410 Datasheet HTML 5Page - International Rectifier IRFP2410 Datasheet HTML 6Page - International Rectifier IRFP2410 Datasheet HTML 7Page - International Rectifier IRFP2410 Datasheet HTML 8Page - International Rectifier  
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IRFP2410
Notes:
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
2.5
V
TJ = 25°C, IS = 37A, VGS = 0V
trr
Reverse Recovery Time
–––
180
270
ns
TJ = 25°C, IF = 37A
Qrr
Reverse Recovery Charge
–––
990
1500
nC
di/dt = 100A/µs
ton
Forward Turn-On Time
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
VDD = 25V, starting T J = 25°C, L = 270µH
RG = 25Ω, IAS = 37A. (See Figure 12)
ISD ≤ 37A, di/dt ≤ 200A/µs, V DD ≤ V(BR)DSS,
TJ ≤ 175°C
Pulse width
≤ 300µs; duty cycle ≤ 2%.
Source-Drain Ratings and Characteristics
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
100
–––
–––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.11
–––
V/°C
Reference to 25°C, I D = 1mA
RDS(ON)
Static Drain-to-Source On-Resistance
–––
––– 0.025
VGS = 10V, ID = 37A
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
VDS = VGS, ID = 250µA
gfs
Forward Transconductance
16
–––
–––
S
VDS = 25V, ID = 37A
–––
–––
25
VDS = 100V, VGS = 0V
–––
–––
250
VDS = 80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage
–––
–––
100
VGS = 20V
Gate-to-Source Reverse Leakage
–––
–––
-100
VGS = -20V
Qg
Total Gate Charge
–––
–––
180
ID = 37A
Qgs
Gate-to-Source Charge
–––
–––
30
nC
VDS = 80V
Qgd
Gate-to-Drain ("Miller") Charge
–––
–––
69
VGS = 10V, See Fig. 6 and 13
td(on)
Turn-On Delay Time
–––
16
–––
VDD = 50V
tr
Rise Time
–––
100
–––
ID = 37A
td(off)
Turn-Off Delay Time
–––
120
–––
RG = 6.2Ω
tf
Fall Time
–––
97
–––
RD = 1.3Ω, See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
Ciss
Input Capacitance
–––
4600
–––
VGS = 0V
Coss
Output Capacitance
–––
1100 --––
pF
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
200
–––
ƒ = 1.0MHz, See Fig. 5
Intrinsic turn-on time is negligible (turn-on is dominated by L S+LD)
–––
–––
240
–––
–––
61
A
nH
LD
Internal Drain Inductance
–––
5.0
–––
LS
Internal Source Inductance
–––
13
–––
IDSS
Drain-to-Source Leakage Current
IGSS
ns
µA
nA


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