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IRFP2410 데이터시트(PDF) 3 Page - International Rectifier

부품명 IRFP2410
상세설명  Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon
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제조업체  IRF [International Rectifier]
홈페이지  http://www.irf.com
Logo IRF - International Rectifier

IRFP2410 데이터시트(HTML) 3 Page - International Rectifier

  IRFP2410 Datasheet HTML 1Page - International Rectifier IRFP2410 Datasheet HTML 2Page - International Rectifier IRFP2410 Datasheet HTML 3Page - International Rectifier IRFP2410 Datasheet HTML 4Page - International Rectifier IRFP2410 Datasheet HTML 5Page - International Rectifier IRFP2410 Datasheet HTML 6Page - International Rectifier IRFP2410 Datasheet HTML 7Page - International Rectifier IRFP2410 Datasheet HTML 8Page - International Rectifier  
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Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
IRFP2410
Fig 1. Typical Output Characteristics,
TC = 25oC
Fig 2. Typical Output Characteristics,
TC = 175oC
1
10
100
1000
0.01
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
DS
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
20µs PULSE WIDTH
T = 25°C
C
A
4.5V
1
10
100
1000
0.01
0.1
1
10
100
4.5V
V
, Drain-to-Source Voltage (V)
DS
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
20µs PULSE WIDTH
T = 175°C
C
A
1
10
100
1000
4
5
6
7
8
9
10
T = 25°C
J
GS
V
, Gate-to-Source Voltage (V)
V
= 50V
20µs PULSE WIDTH
DS
T = 175°C
J
A
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-60 -40 -20
0
20
40
60
80
100 120 140 160 180
J
T , Junction Temperature (°C)
V
= 10V
GS
A
I
= 61A
D


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