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TPCS8004 데이터시트(PDF) 6 Page - Toshiba Semiconductor |
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TPCS8004 데이터시트(HTML) 6 Page - Toshiba Semiconductor |
6 / 7 page TPCS8004 2004-07-06 6 rth − tw Safe operating area EAS − Tch Pulse width tw (S) Drain-source voltage VDS (V) Channel temperature (initial) Tch (°C) −15 V 15 V Test circuit Wave form IAR BVDSS VDD VDS Tch = 25°C (Initial) Peak IAR = 1.3 A, RG = 25 Ω VDD = 50 V, L = 1 mH ⎟⎟ ⎠ ⎞ ⎜⎜ ⎝ ⎛ − ⋅ ⋅ ⋅ = DD V VDSS B VDSS B 2 I L 2 1 AS E 0 25 50 75 100 150 125 0.2 0.4 0.8 1.0 1.2 0.6 0.1 1 m 10 m 100 m 1 10 100 1000 1 0.3 0.5 3 5 10 30 50 100 300 500 (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) t = 10 s Single pulse (2) (1) 0.001 0.1 0.3 1 3 10 30 100 1000 300 0.003 0.005 0.01 0.03 0.05 0.1 0.3 0.5 1 3 10 5 * Single pulse Ta = 25°C Curves must be derated linearly with increase in temperature. ID max (pulse) * 10 ms * 1 ms * VDSS max |
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