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TPCS8004 데이터시트(PDF) 6 Page - Toshiba Semiconductor

부품명 TPCS8004
상세설명  Silicon N Channel MOS Type (Pi-MOSV)
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제조업체  TOSHIBA [Toshiba Semiconductor]
홈페이지  http://www.semicon.toshiba.co.jp/eng
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TPCS8004 데이터시트(HTML) 6 Page - Toshiba Semiconductor

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TPCS8004
2004-07-06
6
rth − tw
Safe operating area
EAS − Tch
Pulse width tw (S)
Drain-source voltage VDS (V)
Channel temperature (initial) Tch (°C)
−15 V
15 V
Test circuit
Wave form
IAR
BVDSS
VDD
VDS
Tch = 25°C (Initial)
Peak IAR = 1.3 A, RG = 25 Ω
VDD = 50 V, L = 1 mH
⎟⎟
⎜⎜
=
DD
V
VDSS
B
VDSS
B
2
I
L
2
1
AS
E
0
25
50
75
100
150
125
0.2
0.4
0.8
1.0
1.2
0.6
0.1
1 m
10 m
100 m
1
10
100
1000
1
0.3
0.5
3
5
10
30
50
100
300
500
(1) Device mounted on a glass-epoxy board (a) (Note 2a)
(2) Device mounted on a glass-epoxy board (b) (Note 2b)
t = 10 s
Single pulse
(2)
(1)
0.001
0.1
0.3
1
3
10
30
100
1000
300
0.003
0.005
0.01
0.03
0.05
0.1
0.3
0.5
1
3
10
5
* Single pulse
Ta
= 25°C
Curves must be derated linearly
with increase in temperature.
ID max (pulse) *
10 ms *
1 ms *
VDSS max


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