GD5F2GQ4UEZFG datasheet(4/50 Pages) GIGADEVICE

부품명	GD5F2GQ4UEZFG

상세설명	SPI(x1/x2/x4) NAND Flash

Download	50 Pages

Scroll/Zoom	100%

제조업체	GIGADEVICE [GigaDevice Semiconductor (Beijing) Inc.]

홈페이지	http://www.gigadevice.com/

Logo

4 / 50 page

SPI(x1/x2/x4) NAND Flash

2G

4

1

FEATURE

◆ 2Gb SLC NAND Flash

◆ Program/Erase/Read Speed

- Page Program time: 400us typical

◆ 2048-Byte+128-Byte Physical Page Size(2)

- Block Erase time: 3ms typical

- Internal ECC Off (ECC_EN=0):

- Page read time: 80us maximum(w/I ECC)

2048-Byte+128-Byte Full Access

- Internal ECC On (ECC_EN=1, default):

◆ Reliability

Program:

2048-Byte+64-Byte

- Endurance: 100K program/erase cycles

Read:

2048-Byte+128-Byte

- Data retention: 10 Years

◆ Standard, Dual, Quad SPI

◆ Low Power Consumption

- Standard SPI: SCLK, CS#, SI, SO, WP#, HOLD#

- 40mA maximum active current

- Dual SPI: SCLK, CS#, SIO0, SIO1, WP#, HOLD#

- 110uA(1) maximum standby current

- Quad SPI: SCLK, CS#, SIO0, SIO1, SIO2, SIO3

◆ Enhanced access performance

◆ High Speed Clock Frequency

- 2kbyte cache for fast random read

- 120MHz for fast read with 30PF load

- Cache read and cache program

- Quad I/O Data transfer up to 480Mbits/s

◆ Advanced Feature for NAND

◆ Software/Hardware Write Protection

- Internal ECC option, per 528bytes

- Write protect all/portion of memory via software

- Internal data move by page with ECC

- Register protection with WP# Pin

- Top or Bottom, Block selection combination

◆ The first block(Block0) is guaranteed to be a valid block

at the time of shipment.

◆ Advanced security Features

- 8K-Byte OTP Region

◆ Single Power Supply Voltage

- Full voltage range for 1.8V: 1.7V ~ 2.0V

- Full voltage range for 3.3V: 2.7V ~ 3.6V

Note (1): When Temperature is 105

℃, the maximum standby current is 200uA

(2)

. 2048Byte+128Byte Page Size can accommodate more advanced ECC algorithm by user’s choice, even though

the internal 4-bit ECC algorithm only requires 64-Byte spare area.

Internal 4-bit ECC is set to on (ECC_EN=1) as shipment default, it can be disabled by setting ECC_EN=0.

- When Internal ECC is enabled, user can only program the first 64-Byte portion of the entire 128-Byte spare

area, and the rest 64-Byte spare area cannot be programed. User can still read the entire 128-Byte spare area.

- When Internal ECC is disabled, user can read and program the entire 128-Byte spare area.

유사한 부품 번호 - GD5F2GQ4UEZFG

제조업체	부품명	데이터시트	상세설명
GigaDevice Semiconducto...	GD5F2GQ4UEZFH	1Mb / 49P	SPI(x1/x2/x4) NAND Flash
GigaDevice Semiconducto...	GD5F2GQ4UEZFS	1Mb / 57P	SPI(x1/x2/x4) NAND Flash

More results

유사한 설명 - GD5F2GQ4UEZFG

제조업체	부품명	데이터시트	상세설명
GigaDevice Semiconducto...	GD5F1GQ4REFIG	1Mb / 53P	SPI(x1/x2/x4) NAND Flash
	GD5F2GQ4RFZIH	1Mb / 47P	SPI(x1/x2/x4) NAND Flash
	GD5F1GQ4REFIH	1Mb / 51P	SPI(x1/x2/x4) NAND Flash
	GD5F1GQ4REFIS	1Mb / 60P	SPI(x1/x2/x4) NAND Flash
	GD5F2GQ4RFZIG	1Mb / 46P	SPI(x1/x2/x4) NAND Flash
	GD5F2GQ4RFZIS	1Mb / 57P	SPI(x1/x2/x4) NAND Flash
	GD5F1GQ4RFFIG	1Mb / 50P	SPI(x1/x2/x4) NAND Flash
	GD5F1GQ4RFFIH	1Mb / 49P	SPI(x1/x2/x4) NAND Flash
	GD5F1GQ4RFFIS	1Mb / 59P	SPI(x1/x2/x4) NAND Flash
	GD5F2GQ4REZIH	1Mb / 49P	SPI(x1/x2/x4) NAND Flash

More results

GD5F2GQ4UEZFG 데이터시트(PDF) 4 Page - GigaDevice Semiconductor (Beijing) Inc.

GD5F2GQ4UEZFG 데이터시트(HTML) 4 Page - GigaDevice Semiconductor (Beijing) Inc.

유사한 부품 번호 - GD5F2GQ4UEZFG

유사한 설명 - GD5F2GQ4UEZFG

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50

데이터시트 다운로드

링크 URL