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MURT20040R 데이터시트(HTML) 1 Page - GeneSiC Semiconductor, Inc.

부품명 MURT20040R
상세내용  Silicon Super Fast Recovery Diode
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제조사  GENESIC [GeneSiC Semiconductor, Inc.]
홈페이지  http://www.genesicsemi.com/
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MURT20040R 데이터시트(HTML) 1 Page - GeneSiC Semiconductor, Inc.

   
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VRRM = 400 V - 600 V
IF(AV) = 200 A
Features
• High Surge Capability
Three Tower Package
• Types from 400 V to 600 V V
RRM
• Isolation Type Package
• Electrically Isolated base plate
• Not ESD Sensitive
Parameter
Symbol
MURT20040(R)
Unit
Repetitive peak reverse voltage
VRRM
400
V
RMS reverse voltage
VRMS
283
V
DC blocking voltage
VDC
400
V
Operating temperature
Tj
-55 to 150
°C
Storage temperature
Tstg
-55 to 150
°C
Parameter
Symbol
MURT20040(R)
Unit
Average forward current (per pkg)
IF(AV)
200
A
Peak forward surge current (per leg)
IFSM
2000
A
Maximum instantaneous forward
voltage (per leg)
1.3
25
μA
1
mA
Maximum reverse recovery time (per
leg)
Trr
90
nS
Thermal characteristics
Maximum thermal resistance, junction
- case
(per leg)
RΘJC
0.45
°C/W
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Conditions
MURT20060(R)
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Conditions
TC = 140 °C
tp = 8.3 ms, half sine
2000
VF
IFM = 100 A, Tj = 25 °C
1.7
V
Maximum instantaneous reverse
current at rated DC blocking voltage
(per leg)
IR
MURT20040 thru MURT20060R
Silicon Super Fast
Recovery Diode
Tj = 25 °C
Tj = 125 °C
IF=0.5 A, IR=1.0 A,
IRR= 0.25 A
MURT20060(R)
200
25
1
110
0.45
600
424
600
-55 to 150
-55 to 150
1
Oct. 2018
http://www.diodemodule.com/silicon_products/modules/murt20040.pdf


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